X-On Electronics has gained recognition as a prominent supplier of IKW30N60H3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKW30N60H3 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKW30N60H3 Infineon

Name: IKW30N60H3
Brand: Infineon
SKU: IKW30N60H3_Infineon
Availability: InStock
Rating: 5 (11 reviews)

Hot

IKW30N60H3 electronic component of Infineon

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Part No.	IKW30N60H3
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	IGBT Transistors 600V 30A 187W
Datasheet:	IKW30N60H3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.7252 ea
Line Total: USD 2.73

Availability - 690
Ship by Mon. 26 May to Thu. 29 May

MOQ: 1 Multiples: 1
Pack Size: 1

IKW30N60H3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

690

Ship by Mon. 26 May to Thu. 29 May

MOQ : 1
Multiples : 1

1 : USD 2.7252
10 : USD 1.6841
30 : USD 1.3086
90 : USD 1.1086
480 : USD 1.0198
960 : USD 0.979

1691

Ship by Thu. 15 May to Mon. 19 May

MOQ : 1
Multiples : 1

1 : USD 3.55
10 : USD 2.438
100 : USD 1.969
480 : USD 1.771
1200 : USD 1.562
2640 : USD 1.562

Specifications

Manufacturer

Infineon Infineon

Product Category

IGBT Transistors IGBT Transistors

RoHS - XON

Y Y

Configuration

Single Single

Collector- Emitter Voltage VCEO Max

600 V 600 V

Collector-Emitter Saturation Voltage

1.95 V 1.95 V

Maximum Gate Emitter Voltage

20 V 20 V

Continuous Collector Current at 25 C

30 A 30 A

Gate-Emitter Leakage Current

100 nA 100 nA

Power Dissipation

187 W 187 W

Package / Case

TO - 247 TO - 247

Packaging

Tube Tube

Technology

Si Si

Mounting Style

Through Hole Through Hole

Technology

Si Si

Pd - Power Dissipation

187 W 187 W

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Ikw30n60 Ikw30n60

Brand

Infineon Technologies Infineon Technologies

Factory Pack Quantity :

240 240

Height

20.7 mm 20.7 mm

Length

15.87 mm 15.87 mm

Width

5.31 mm 5.31 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Igbt Transistors Igbt Transistors

Subcategory

Igbts Igbts

Taric

8541290000 8541290000

Tradename

Trenchstop Trenchstop

Category

Igbt Transistors Igbt Transistors

Brand Category

Infineon Infineon

Notes:- Show Stocked Products With Similar Attributes.

IKW30N60H3 Alternative Parts

We are delighted to provide the IKW30N60H3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKW30N60H3 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Data sheet Industrial Power ControlIKW30N60H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TM TRENCHSTOP technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel diode G maximum junction temperature 175C E qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant complete product spectrum and PSpice Models:

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Availability	Price	Buy Price	Quantity
690 Ship by Mon. 26 May to Thu. 29 May MOQ : 1 Multiples : 1	1 : USD 2.7252 10 : USD 1.6841 30 : USD 1.3086 90 : USD 1.1086 480 : USD 1.0198 960 : USD 0.979

1691 Ship by Thu. 15 May to Mon. 19 May MOQ : 1 Multiples : 1	1 : USD 3.55 10 : USD 2.438 100 : USD 1.969 480 : USD 1.771 1200 : USD 1.562 2640 : USD 1.562

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