IKW50N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s Designed for : G - Frequency Converters E - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) PG-TO247-3 Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW50N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Diode thermal resistance, R 0.8 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic V V =0V, I =0.2mA Collector-emitter breakdown voltage 600 - - V ( B R ) C E S G E C V V = 15V, I =50A Collector-emitter saturation voltage C E ( s a t ) G E C - 1.5 2 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =50A F G E F T =25 C - 1.65 2.05 j - 1.6 - T =175 C j V I =0.8mA,V =V Gate-emitter threshold voltage 4.1 4.9 5.7 G E ( t h) C C E G E I V =600V, Zero gate voltage collector current A C E S C E V =0V G E T =25 C j - - 40 T =175 C j - - 3500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =50A - 31 - S f s C E C Integrated gate resistor R - G i n t Dynamic Characteristic C V =25V, Input capacitance - 3140 - pF i s s C E Output capacitance C V =0V, - 200 - G E o s s f=1MHz C Reverse transfer capacitance - 93 - r s s Q V =480V, I =50A Gate charge - 310 - nC G a t e C C C V =15V G E Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) I Short circuit collector current V =15V,t 5 s - 458.3 - A C ( S C ) G E S C V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.6 20.09.2013 IFAG IPC TD VLS