PD - 93890
IRFB59N10D
IRFS59N10D
SMPS MOSFET
IRFSL59N10D
HEXFET Power MOSFET
Applications
V R max I
DSS DS(on) D
l High frequency DC-DC converters
100V 0.025 59A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C to Simplify Design, (See
OSS
App. Note AN1001)
2
TO-220AB D Pak TO-262
l Fully Characterized Avalanche Voltage
IRFB59N10D
IRFS59N10D IRFSL59N10D
and Current
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 59
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 42 A
D C GS
I Pulsed Drain Current 236
DM
P @T = 25C Power Dissipation 3.8 W
D A
P @T = 25C Power Dissipation 200
D C
Linear Derating Factor 1.3 W/C
V Gate-to-Source Voltage 30 V
GS
dv/dt Peak Diode Recovery dv/dt 3.3 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
Typical SMPS Topologies
l Half-bridge and Full-bridge DC-DC Converters
l Full-bridge Inverters
Notes through are on page 11
www.irf.com 1
4/17/00IRFB/IRFS/IRFSL59N10D
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA
(BR)DSS J
D
R Static Drain-to-Source On-Resistance 0.025 V = 10V, I = 35.4A
DS(on) GS D
V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A
GS(th) DS GS D
25 V = 100V, V = 0V
DS GS
I Drain-to-Source Leakage Current
A
DSS
250 V = 80V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 30V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -30V
GS
Dynamic @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
g Forward Transconductance 18 S V = 50V, I = 35.4A
fs DS D
Q Total Gate Charge 76 114 I = 35.4A
g D
Q Gate-to-Source Charge 24 36 nC V = 80V
gs DS
Q Gate-to-Drain Mille) Charge 36 54 V = 10V,
gd GS
t Turn-On Delay Time 16 V = 50V
d(on) DD
t Rise Time 90 I = 35.4A
r D
ns
t Turn-Off Delay Time 20 R = 2.5
d(off) G
t Fall Time 12 V = 10V
f GS
C Input Capacitance 2450 V = 0V
iss GS
C Output Capacitance 740 V = 25V
oss DS
C Reverse Transfer Capacitance 190 pF = 1.0MHz
rss
C Output Capacitance 3370 V = 0V, V = 1.0V, = 1.0MHz
oss GS DS
C Output Capacitance 390 V = 0V, V = 80V, = 1.0MHz
oss GS DS
C eff. Effective Output Capacitance 690 V = 0V, V = 0V to 80V
oss GS DS
Avalanche Characteristics
Parameter Typ. Max. Units
E Single Pulse Avalanche Energy 510 mJ
AS
I Avalanche Current 35.4 A
AR
E Repetitive Avalanche Energy 20 mJ
AR
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 0.75
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
R Junction-to-Ambient 40
JA
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
59
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
236
(Body Diode) p-n junction diode. S
V Diode Forward Voltage 1.3 V T = 25C, I = 35.4A, V = 0V
SD J S GS
t Reverse Recovery Time 130 200 ns T = 25C, I = 35.4A
rr J F
Q Reverse RecoveryCharge 0.75 1.1 C di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on
S D
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