PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features UltraFast: Optimized for high operating V = 1200V frequencies up to 40 kHz in hard switching, CES >200 kHz in resonant mode New IGBT design provides tighter V = 2.43V CE(on) typ. G parameter distribution and higher efficiency than previous generations V = 15V, I = 21A E GE C Optimized for power conversion SMPS, UPS and welding n-channel Industry standard TO-247AC package Lead-Free Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 1200 V CES I T = 25C Continuous Collector Current 41 C C I T = 100C Continuous Collector Current 21 A C C I Pulsed Collector Current 82 CM I Clamped Inductive Load Current 82 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 270 mJ ARV P T = 25C Maximum Power Dissipation 160 D C W P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.77 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz) www.irf.com 1 04/26/04IRG4PH40UPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 0.43 V/C V = 0V, I = 1.0mA (BR)CES J GE C 2.43 3.1 I = 21A V = 15V C GE V Collector-to-Emitter Saturation Voltage 2.97 I = 41A See Fig.2, 5 C CE(ON) V 2.47 I = 21A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 16 24 S V = 100V, I = 21A fe CE C 250 V = 0V, V = 1200V GE CE I Zero Gate Voltage Collector Current CES 2.0 A V = 0V, V = 10V, T = 25C GE CE J 5000 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 86 130 I = 21A g C Q Gate - Emitter Charge (turn-on) 13 20 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) 29 44 V = 15V gc GE t Turn-On Delay Time 24 d(on) t Rise Time 24 T = 25C r J ns t Turn-Off Delay Time 220 330 I = 21A, V = 960V d(off) C CC t Fall Time 180 270 V = 15V, R = 10 f GE G E Turn-On Switching Loss 1.04 Energy losses includetai on E Turn-Off Switching Loss 3.40 mJ See Fig. 9, 10, 14 off E Total Switching Loss 4.44 5.2 ts t Turn-On Delay Time 24 T = 150C, d(on) J t Rise Time 25 I = 21A, V = 960V r C CC ns t Turn-Off Delay Time 310 V = 15V, R = 10 d(off) GE G t Fall Time 380 Energy losses includetai f E Total Switching Loss 7.39 mJ See Fig. 11, 14 ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 1800 V = 0V ies GE C Output Capacitance 120 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 18 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) Pulse width 80s duty factor 0.1%. V = 80%(V ), V = 20V, L = 10H, R = 10, CC CES GE G (See fig. 13a) Pulse width 5.0s, single shot. Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com