IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C V = 1200V CES Features I = 15A, T = 100C Low V trench IGBT technology CE (ON) C C Low switching losses T = 150C G J(MAX) Square RBSOA Ultra-low V diode F V typ. = 1.95V E CE(ON) 1300Vpk repetitive transient capacity n-channel 100% of the parts tested for I LM Positive V temperature co-efficient CE (ON) G G Tight parameter distribution Lead-free package E Benefits E C C Device optimized for induction heating and soft switching G G applications High efficiency due to low V , low switching losses and CE(ON) IRG7PH28UD1PbF IRG7PH28UD1MPbF TO-247AC TO-247AD ultra-low V F Rugged transient performance for increased reliability G C E Excellent current sharing in parallel operation Gate Collector Emitter Low EMI Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH28UD1PbF TO-247AC Tube 25 IRG7PH28UD1PbF IRG7PH28UD1MPbF TO-247AD Tube 25 IRG7PH28UD1MPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES V Repetitive Transient Collector-to-Emitter Voltage 1300 (BR) Transient I T = 25C Continuous Collector Current 30 C C I T = 100C Continuous Collector Current 15 C C I Pulse Collector Current, V = 15V 100 CM GE A I Clamped Inductive Load Current, V = 20V 60 LM GE I T = 25C Diode Continuous Forward Current 30 F C I T = 100C Diode Continuous Forward Current 15 F C I Diode Maximum Forward Current 60 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 115 W D C P T = 100C Maximum Power Dissipation 46 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) 1 www.irf.com 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Junction-to-Case (IGBT) 1.09 JC R (Diode) Junction-to-Case (Diode) 1.35 C/W JC R Case-to-Sink (flat, greased surface) 0.24 CS R Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 100A (BR)CES GE C /T Temperature Coeff. of Breakdown Voltage 1.4 V/C V = 0V, I = 1mA (25C-150C) V GE C (BR)CES J V Collector-to-Emitter Saturation Voltage 1.95 2.30 V I = 15A, V = 15V, T = 25C CE(on) C GE J 2.4 I = 15A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 350A GE(th) CE GE C gfe Forward Transconductance 13 S V = 50V, I = 15A, PW = 20s CE C I Collector-to-Emitter Leakage Current 1.0 100 A V = 0V, V = 1200V CES GE CE 100 V = 0V, V = 1200V, T = 150C GE CE J V Diode Forward Voltage Drop 1.1 1.2 V I = 15A FM F 1.0 I = 15A, T = 150C F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 60 90 I = 15A g C Q Gate-to-Emitter Charge (turn-on) 10 15 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 27 40 V = 600V gc CC E Turn-Off Switching Loss 543 766 J I = 15A, V = 600V, V = 15V off C CC GE R = 22 , L = 1.0mH, T = 25C G J Energy losses include tail & diode t Turn-Off delay time 229 ns d(off) reverse recovery t Fall time 62 f E Turn-Off Switching Loss 939 J I = 15A, V = 600V, V =15V off C CC GE R = 22 , L = 1.0mH, T = 150C G J t Turn-Off delay time 272 ns Energy losses include tail & diode d(off) t Fall time 167 reverse recovery f C Input Capacitance 1160 V = 0V ies GE C Output Capacitance 55 pF V = 30V oes CC C Reverse Transfer Capacitance 30 f = 1.0Mhz res T = 150C, I = 60A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp 1200V CC Rg = 22 , V = +20V to 0V GE Notes: V = 80% (V ), V = 20V, L = 25H, R = 22 . CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J FBSOA operating conditions only. V = 0V, T = 75C, PW 10s. GE J 2 www.irf.com 2012 International Rectifier January 8, 2013