PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Maximum junction temperature 175 C I = 20A NOMINAL Square RBSOA 100% of the parts tested for I LM G T = 175C J(max) Positive V temperature co-efficient CE (ON) Tight parameter distribution E V typ. = 1.9V CE(on) Lead -Free n-channel Benefits High efficiency in a wide range of applications C C Suitable for a wide range of switching frequencies due to low V and low switching losses CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E C C G G Applications TO-247AC TO-247AD IRG7PH35UPbF IRG7PH35U-EP U.P.S Welding GC E Solar inverter Gate Collector Emitter Induction heating Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 55 C C I T = 100C Continuous Collector Current 35 C C I Nominal Current 20 A NOMINAL I Pulse Collector Current, V =15V CM GE 60 Clamped Inductive Load Current, V =20V I 80 LM GE V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 210 D C W P T = 100C Maximum Power Dissipation 105 D C T Operating Junction and -55 to +175 J T C Storage Temperature Range STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.70 JC C/W R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 3/26/10IRG7PH35UPbF/IRG7PH35U-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.2 V/CV = 0V, I = 1mA (25C-150C) (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.9 2.2 V I = 20A, V = 15V, T = 25C CE(on) C GE J 2.3 I = 20A, V = 15V, T = 150C C GE J 2.4 I = 20A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 600 A GE(th) CE GE C V /TJ Threshold Voltage temp. coefficient -16 mV/C V = V , I = 600 A (25C - 150C) GE(th) CE GE C gfe Forward Transconductance 22 S V = 50V, I = 20A, PW = 30 s CE C I Collector-to-Emitter Leakage Current 2.0 100 AV = 0V, V = 1200V CES GE CE 2000 V = 0V, V = 1200V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 85 130 I = 20A g C Q Gate-to-Emitter Charge (turn-on) 15 20 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 35 50 V = 600V gc CC E Turn-On Switching Loss 1060 1300 I = 20A, V = 600V, V = 15V on C CC GE E Turn-Off Switching Loss 620 850 JR = 10 , L = 200uH, L = 150nH, T = 25C off G S J E Total Switching Loss 1680 2150 Energy losses include tail & diode reverse recovery total t Turn-On delay time 30 50 Diode clamp the same as IRG7PH35UDPbF d(on) t Rise time 15 30 ns r t Turn-Off delay time 160 180 d(off) t Fall time 80 105 f E Turn-On Switching Loss 1880 I = 20A, V = 600V, V =15V on C CC GE E Turn-Off Switching Loss 1140 JR =10, L=200uH, L =150nH, T = 175C off G S J Energy losses include tail & diode reverse recovery E Total Switching Loss 3020 total t Turn-On delay time 25 Diode clamp the same as IRG7PH35UDPbF d(on) t Rise time 20 ns r t Turn-Off delay time 200 d(off) t Fall time 200 f C Input Capacitance 1940 pF V = 0V ies GE C Output Capacitance 60 V = 30V oes CC C Reverse Transfer Capacitance 40 f = 1.0Mhz res T = 175C, I = 80A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 10, V = +20V to 0V GE Notes: V = 80% (V ), V = 20V, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at 2 www.irf.com