IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C V = 1200V CES I = 65A, T =100C C C t 10s, T = 150C E SC J(max) G C V typ. = 1.9V IC = 50A CE(ON) G E n-channel IRG7PSH54K10DPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low V and switching losses High efficiency in a Wide Range of Applications CE(ON) 10s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PSH54K10DPbF Super-247 Tube 25 IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 120 C C I T = 100C Continuous Collector Current 65 C C A I Pulse Collector Current, V=20V 200 CM GE I Clamped Inductive Load Current, V =20V 200 LM GE I T = 25C Diode Continuous Forward Current 50 F C I T = 100C Diode Continuous Forward Current 25 F C V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 520 D C W P T = 100C Maximum Power Dissipation 210 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.24 R (IGBT) JC Thermal Resistance Junction-to-Case-(each Diode) 0.70 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2013 International Rectifier April 16, 2013 IRG7PSH54K10DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 1.3 V/C V = 0V, I = 5mA (25C-150C) V /T GE C (BR)CES J 1.9 2.4 I = 50A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage V CE(on) 2.4 I = 50A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 7.5 V V = V , I = 2.4mA GE(th) CE GE C Threshold Voltage Temperature Coeff. -15 mV/C V = V , I = 2.4mA (25C-150C) V /T CE GE C GE(th) J gfe Forward Transconductance 36 S V = 50V, I = 50A, PW = 20s CE C 1.0 45 V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current A CES = 0V, V = 1200V, T = 150C 1800 V GE CE J I Gate-to-Emitter Leakage Current 200 nA V = 30V GES GE V 2.5 3.5 I = 16A F F Diode Forward Voltage Drop V 2.1 I = 16A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 290 435 I = 50A g C Q Gate-to-Emitter Charge (turn-on) 60 90 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 130 195 V = 600V gc CC E Turn-On Switching Loss 4.8 5.7 on E Turn-Off Switching Loss 2.8 3.7 mJ off I = 50A, V = 600V, V =15V C CC GE E Total Switching Loss 7.6 9.4 total R = 5 , T = 25C G J t Turn-On delay time 110 130 d(on) Energy losses include tail & diode t Rise time 80 105 r ns reverse recovery t Turn-Off delay time 490 520 d(off) t Fall time 70 90 f E Turn-On Switching Loss 6.8 on E Turn-Off Switching Loss 4.7 off mJ I = 50A, V = 600V, V =15V C CC GE E Total Switching Loss 11.5 total R = 5 , T = 150C G J t Turn-On delay time 85 d(on) Energy losses include tail & diode t Rise time 90 r ns reverse recovery t Turn-Off delay time 490 d(off) t Fall time 290 f C Input Capacitance 5700 V = 0V ies GE pF V = 30V C Output Capacitance 290 oes CC C Reverse Transfer Capacitance 150 f = 1.0Mhz res T = 150C, I = 200A J C FULL SQUARE V = 960V, Vp 1200V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 640 J J V = 600V, I = 16A t Diode Reverse Recovery Time 170 ns CC F rr V = 15V, Rg = 5 I Peak Reverse Recovery Current 25 A rr GE Notes: V = 80% (V ), V = 20V CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2013 International Rectifier April 16, 2013