Product Information

TD330N16KOF

TD330N16KOF electronic component of Infineon

Datasheet
Infineon Technologies SCR Modules 1.6KV 9.1KA 5-Pin

Manufacturer: Infineon
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Price (USD)

1: USD 208.748 ea
Line Total: USD 208.75

14 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

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TD330N16KOF
Infineon

1 : USD 203.5615
12 : USD 202.423

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Mounting Style
Current Rating
Off-State Leakage Current Vdrm Idrm
Brand
Circuit Type
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Datenblatt / Data sheet N Netz-Thyristor-Modul TT330N Phase Control Thyristor Module TT330N TD330N Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 520 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 330 A Dauergrenzstrom T = 85C I C TAVM average on-state current 9100 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 8000 A surge current T = T , t = 10 ms vj vj max P 414000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 320000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 250 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C th 1000 V/s 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values 1,44 V Durchlaspannung T = T , i = 800 A v max. vj vj max T T on-state voltage 0,80V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,60 m Ersatzwiderstand T = T r vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 200 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 300mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 1200mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 70mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G C.Drilling date of publication: 19.01.06 prepared by: revision: 2 approved by: M. Leifeld BIP PPE4 19.01.2006 C. Drilling A 01/06 Seite/page 1/13 Datenblatt / Data sheet N Netz-Thyristor-Modul TT330N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 250 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 3,0 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,6 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,059 C/W thJC pro Zweig / per arm, = 180 sin max. 0,117 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,056 C/W pro Zweig / per arm, DC max. 0,111 C/W pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,04 C/W thermal resistance, case to heatsink 135 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+135C c op operating temp erature Lagertemperatur T -40...+135 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 5 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 12 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 800g weight Kriechstrecke 17mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP PPE4 19.01.2006 C. Drilling A 01/06 Seite/page 2/13

Tariff Desc

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