X-On Electronics has gained recognition as a prominent supplier of TD92N16KOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TD92N16KOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TD92N16KOF Infineon

TD92N16KOF electronic component of Infineon
TD92N16KOF Infineon
TD92N16KOF Discrete Semiconductor Modules
TD92N16KOF  Semiconductors

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See Product Specifications
Part No. TD92N16KOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1.6KV 2.05KA
Datasheet: TD92N16KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 122.1612 ea
Line Total: USD 122.16 
Availability - 13
Ship by Fri. 09 May to Tue. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 122.1612
10 : USD 116.6058

   
Manufacturer
Product Category
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
On-State Rms Current - It Rms
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage Vdrm
Off-State Leakage Current @ Vdrm Idrm
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TD92N16KOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TD92N16KOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor-Modul TT92N Phase Control Thyristor Module TT92N TD92N DT92N TT92N..K..-K TD92N..K..-A NT92N Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 160 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 92 A Dauergrenzstrom T = 85C I C TAVM 104 A average on-state current T = 76C C 2050 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 1800 A surge current T = T , t = 10 ms vj vj max P 21000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 16200 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 f = 50 Hz, 150 A/s Kritische Stromsteilheit (di /dt) T cr i = 0,6 A, di /dt = 0,6 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 300 A v max. 1,62 V vj vj max T T on-state voltage Schleusenspannung T = T V 0,85 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 2,15 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 120 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 1,4 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 5,0 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 2,5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 620 mA vj D GK L latching current i = 0,6 A, di /dt = 0,6 A/s, GM G t = 20 s g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 25 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 T = 25 C, t max. 3 s vj gd gate controlled delay time i = 0,6 A, di /dt = 0,6 A/s GM G prepared by: C.Drilling date of publication: 09.07.02 approved by: J. Novotny revision: 3 BIP AC/ 27.05.2002, C. Drilling A8/02 Seite/page 1/12Datenblatt / Data sheet N Netz-Thyristor-Modul TT92N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 150 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,0 ThermThermische Eigische Eigenschaften / Thermaenschl properties aften Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,185 C/W thJC pro Zweig / per arm, = 180 sin max. 0,370 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,175 C/W pro Zweig / per arm, DC max. 0,350 C/W pro Modul / per Module max. 0,05 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,10 C/W thermal resistance, case to heatsink 130 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+130 C c op operating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 4 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 4 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 160 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC/ 27.05.2002, C. Drilling A8/02 Seite/page 2/12

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