Product Information

TT162N12KOF-K

TT162N12KOF-K electronic component of Infineon

Datasheet
Infineon Technologies SCRs PCT 1200V 162A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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TT162N12KOF-K
Infineon

1 : USD 142.255
8 : USD 133.0435
24 : USD 133.0435
56 : USD 132.2845
104 : USD 130.2375
256 : USD 127.926
2504 : USD 127.9145
N/A

Obsolete
     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Holding Current Ih Max
Mounting Style
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
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Datenblatt / Data sheet Netz-Thyristor-Modul TT162N Phase Control Thyristor Module TT162N TD162N TT162N...-K TD162N ...-A Kenndaten TT162N...-A Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung Tvj = -40C... Tvj max VDSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 260 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 162 A Dauergrenzstrom T = 85C I C TAVM average on-state current 5200 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 4400 A surge current T = T , t = 10 ms vj vj max P 135000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 97000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 f = 50 Hz, 150 A/s Kritische Stromsteilheit (di /dt) T cr i = 0,6 A, di /dt = 0,6 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 500 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C th 1000 V/s 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 500 A v max. 1,41 V vj vj max T T on-state voltage Schleusenspannung T = T V 0,85 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 0,95 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 150 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 2 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 800 mA vj D GK L latching current i = 0,6 A, di /dt = 0,6 A/s, GM G t = 20 s g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 30 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6T = 25 C, t max. 3 s vj gd gate controlled delay time i = 0,6 A, di /dt = 0,6 A/s GM G prepared by: AG date of publication: 2017-08-16 approved by: ML revision: 3.4 Date of Publication 2017-08-16 Seite/page 1/13 Revision: 3.4 Datenblatt / Data sheet Netz-Thyristor-Modul TT162N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 200 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,0 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften pro Modul / per Module, = 180 sin R max. 0,100 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,200 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,096 C/W pro Zweig / per arm, DC max. 0,192 C/W pro Modul / per Module max. 0,03 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,06 C/W thermal resistance, case to heatsink 125 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op ope rating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 6 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 310 g weight Kriechstrecke 15 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83335 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. Date of Publication 2017-08-16 Seite/page 2/13 Revision: 3.4

Tariff Desc

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CYP
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Infineon IR
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Infineon (IRF)
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INFINEON TECH ICs
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