Product Information

DPAD1

DPAD1 electronic component of InterFET

Datasheet
Diodes - General Purpose, Power, Switching Dual Pico-Amp Diode 50mA -45BVr 0.8Vf
Manufacturer: InterFET
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 20.7876 ea
Line Total: USD 20.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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DPAD1
InterFET

1 : USD 20.7876
10 : USD 19.3164
100 : USD 16.7772
500 : USD 15.1636
1000 : USD 14.6296
2500 : USD 14.6178
5000 : USD 14.6059
10000 : USD 14.5941
25000 : USD 14.5822

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

Product Technical OrOrdderer Folder Support NowNow InterFET DPAD1-2 DPAD1, DPAD2 Dual PicoAmp Diode TO-72 Bottom View Features InterFET N0001H Geometry Cathode 3 Low Leakage: 0.5pA Typical Low Capacitance: 0.8pF Typical Anode 4 Anode 2 RoHS Compliant Custom Package types Available 1 Cathode Applications High Impedance Protection Circuits Low Power Battery Circuitry High Impedance Diode Switching Description The -45V InterFET DPAD1 and DPAD2 are targeted for low power and high impedance applications. Leakages are typically 0.5pA at room temperatures. The DPAD series houses two parts per package. The TO-72 package is hermetically sealed and suitable for military applications. Product Summary Parameters DPAD1 Min DPAD2 Min Unit BVR Breakdown Reverse Voltage -45 -45 V IR Reverse Current -1 (Max) -2 (Max) pA V Forward Voltage Drop 1.5 (Max) 1.5 (Max) V F Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging DPAD1 DPAD2 Through-Hole TO-72 Bulk Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35302.R00Product Technical OrOrdderer Folder Support NowNow InterFET DPAD1-2 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation mW D P Power Derating mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -55 to 125 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) DPAD1 DPAD2 Parameters Conditions Min Typ Max Min Typ Max Unit Breakdown BVR IR = -1A -45 -45 V Reverse Voltage I Reverse Current V = -20V -1 -2 pA R R Forward Voltage VF IF = 5mA 0.8 1.5 0.8 1.5 V Drop CR Capacitance VR = -5V, f = 1MHz 0.8 0.8 pF Differential C C R1 R2 VR1 = VR2 = -5V, f = 1MHz 0.2 0.2 pF Capacitance DPAD1-2 2 of 3 InterFET Corporation Document Number: IF35302.R00 www.InterFET.com December, 2018

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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