Product Information

IS42S16400J-5TL

IS42S16400J-5TL electronic component of ISSI

Datasheet
Memory; SDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; 0÷70°C; 3.3VDC

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2655 ea
Line Total: USD 2.2655

5450 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9862 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 1.8559
10 : USD 1.7969
108 : USD 1.7287
540 : USD 1.7024
1080 : USD 1.6684
2592 : USD 1.6684
5076 : USD 1.6684

16 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 1
Multiples : 1
1 : USD 3.814
10 : USD 2.9807
30 : USD 2.4091
100 : USD 2.1293
500 : USD 2.0204
1000 : USD 1.9702

5450 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1
1 : USD 2.2655
10 : USD 2.0815
108 : USD 1.794
540 : USD 1.771
1080 : USD 1.6905
2592 : USD 1.5985
5076 : USD 1.5755
10044 : USD 1.5295
25056 : USD 1.4835

80 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 6.5
4 : USD 4.472
11 : USD 4.225

9862 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 6
Multiples : 1
6 : USD 1.8559
10 : USD 1.7969
108 : USD 1.7287
540 : USD 1.7024
1080 : USD 1.6684

     
Manufacturer
Product Category
Type
Mounting Style
Package / Case
Data Bus Width
Organisation
Memory Size
Maximum Clock Frequency
Access Time
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
IS31AP2005-DLS2-EB electronic component of ISSI IS31AP2005-DLS2-EB

IS31AP2005 - 1-Channel (Mono) Output Class D Audio Amplifier Evaluation Board
Stock : 1

IS31SE5100-QFLS2-EB electronic component of ISSI IS31SE5100-QFLS2-EB

Touch Sensor Development Tools Eval Board for IS31SE5100
Stock : 1

IS25LP256D-RMLE electronic component of ISSI IS25LP256D-RMLE

NOR Flash 256Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin
Stock : 0

IS29GL256-70SLET electronic component of ISSI IS29GL256-70SLET

NOR Flash 256Mb, 56 pin TSOP, 3V, RoHS, IT, HIGHEST SECTOR PROTECTED
Stock : 2280

IS25LP512M-RMLE electronic component of ISSI IS25LP512M-RMLE

NOR Flash Serial-SPI 2.5V/3.3V 512M-Bit 64M X 8Bit 7ns/8.5ns 16-Pin SOIC
Stock : 0

IS25LP064A-JBLA3 electronic component of ISSI IS25LP064A-JBLA3

NOR Flash 64M 2.3-3.6V 133Mhz Serial NOR Flash
Stock : 0

IS31FL3236A-QFLS2-EBCYCLE electronic component of ISSI IS31FL3236A-QFLS2-EBCYCLE

LED Lighting Development Tools Eval Board for IS31FL3236A
Stock : 1

IS31FL3743A-QULS4-EB electronic component of ISSI IS31FL3743A-QULS4-EB

LED Lighting Development Tools Eval Board for IS31FL3743A
Stock : 1

IS31LT3117-ZLS4-EB electronic component of ISSI IS31LT3117-ZLS4-EB

LED Lighting Development Tools Eval Board for IS31LT3117
Stock : 0

IS31FL3732A-QFLS2-EB electronic component of ISSI IS31FL3732A-QFLS2-EB

LED Lighting Development Tools Eval Board for IS31FL3732A
Stock : 1

Image Description
IS42S16320F-7BL electronic component of ISSI IS42S16320F-7BL

DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 ball BGA (8mmx13mm), RoHS
Stock : 235

AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

IS43TR16640BL-125JBL electronic component of ISSI IS43TR16640BL-125JBL

DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
Stock : 1

Hot IS43DR16320E-25DBLI electronic component of ISSI IS43DR16320E-25DBLI

DRAM 512M 32Mx16 400MHz DDR2 1.8V
Stock : 2090

MT48LC4M32B2P-6A:L TR electronic component of Micron MT48LC4M32B2P-6A:L TR

DRAM SDRAM 128M 4MX32 TSOP
Stock : 0

IS42S32800J-75EBL electronic component of ISSI IS42S32800J-75EBL

DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz @ CL2, 90 ball BGA (8mmx13mm) RoHS
Stock : 0

IS43DR86400E-3DBLI electronic component of ISSI IS43DR86400E-3DBLI

DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT
Stock : 242

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

IS43R16320F-6TLI electronic component of ISSI IS43R16320F-6TLI

DRAM 512M 32Mx16 166MHz DDR 2.5V
Stock : 0

W631GG6NB-12 electronic component of Winbond W631GG6NB-12

DRAM 1Gb DDR3 SDRAM, x16, 800MHz
Stock : 1

IS42S16400J IS45S16400J 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) JULY 2014 SYNCHRONOUS DYNAMIC RAM FEATURES OVERVIEW ISSI s 64Mb Synchronous DRAM is organized as 1,048,576 Clock frequency: 200, 166, 143, 133 MHz bits x 16-bit x 4-bank for improved perfor mance. The Fully synchronous all signals referenced to a synchronous DRAMs achieve high-speed data transfer positive clock edge using pipeline architecture. All inputs and outputs signals Inter nal bank for hiding row access/precharge refer to the rising edge of the clock input. Single 3.3V power supply LVTTL interface Programmable burst length KEY TIMING PARAMETERS (1, 2, 4, 8, full page) Programmable burst sequence: Parameter -5 -6 -7 Unit Sequential/Interleave Clk Cycle Time CAS Latency = 3 5 6 7 ns Self refresh modes CAS Latency = 2 7.5 7.5 7.5 ns Auto refresh (CBR) Clk Frequency 4096 refresh cycles ever y 64 ms (Com, Ind, A1 CAS Latency = 3 200 166 143 Mhz grade) or 16ms (A2 grade) CAS Latency = 2 133 133 133 Mhz Random column address ever y clock cycle Access Time from Clock Programmable CAS latency (2, 3 clocks) CAS Latency = 3 4.8 5.4 5.4 ns CAS Latency = 2 5.4 5.4 5.4 ns Burst read/wr ite and burst read/single wr ite operations capability Burst ter mination by burst stop and precharge command ADDRESS TABLE OPTIONS Parameter 4M x 16 Package: Configuration 1M x 16 x 4 54-pin TSOP II banks 54-ball TF-BGA (8mm x 8mm) Refresh Count 60-ball TF-BGA (10.1mm x 6.4mm) Com./Ind. 4K/64ms A1 4K/64ms Operating Temperature Range A2 4K/16ms o o Commercial (0 C to +70 C) o o Row Addresses A0-A11 Industrial (-40 C to +85 C) o o Column Addresses A0-A7 Automotive Grade A1 (-40 C to +85 C) o o Automotive Grade A2 (-40 C to +105 C) Bank Address Pins BA0, BA1 Auto Precharge Pins A10/AP Copyright 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex- pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. G 7/30/2014IS42S16400J IS45S16400J GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic other three banks will hide the precharge cycles and provide random-access memor y designed to operate in 3.3V seamless, high-speed, random-access operation. memory systems containing 67,108,864 bits. Internally SDRAM read and write accesses are burst oriented starting configured as a quad-bank DRAM with a synchronous at a selected location and continuing for a programmed interface. Each 16,777,216-bit bank is organized as 4,096 number of locations in a programmed sequence. The rows by 256 columns by 16 bits. registration of an ACTIVE command begins accesses, The 64Mb SDRAM includes an AUTO REFRESH MODE, followed by a READ or WRITE command. The ACTIVE and a power-saving, power-down mode. All signals are command in conjunction with address bits registered are registered on the positive edge of the clock signal, CLK. used to select the bank and row to be accessed (BA0, All inputs and outputs are LVTTL compatible. BA1 select the bank A0-A11 select the row). The READ or WRITE commands in conjunction with address bits The 64Mb SDRAM has the ability to synchronously burst registered are used to select the starting column location data at a high data rate with automatic column-address for the burst access. generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly Programmable READ or WRITE burst lengths consist of change column addresses on each clock cycle during 1, 2, 4 and 8 locations, or full page, with a burst terminate burst access. option. A self-timed row precharge initiated at the end of the burst sequence is available with the AUTO PRECHARGE function enabled. Precharge one bank while accessing one of the FUNCTIONAL BLOCK DIAGRAM CLK DQM CKE COMMAND DATA IN CS DECODER BUFFER RAS 16 16 & CAS CLOCK WE REFRESH MODE DQ 0-15 A10 GENERATOR CONTROLLER REGISTER 12 VDD/VDDQ SELF DATA OUT REFRESH A11 BUFFER GND/GNDQ CONTROLLER 16 16 A9 A8 A7 REFRESH A6 COUNTER A5 A4 4096 A3 4096 MEMORY CELL A2 4096 ARRAY A1 4096 12 A0 BANK 0 ROW ROW BA0 ADDRESS ADDRESS BA1 LATCH BUFFER 12 12 SENSE AMP I/O GATE 256K (x 16) COLUMN BANK CONTROL LOGIC ADDRESS LATCH 8 BURST COUNTER COLUMN DECODER COLUMN ADDRESS BUFFER 8 2 Integrated Silicon Solution, Inc. www.issi.com Rev. G 7/30/2014 MULTIPLEXER ROW DECODER

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted