X-On Electronics has gained recognition as a prominent supplier of DPG30C200HB Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. DPG30C200HB Small Signal Switching Diodes are a product manufactured by IXYS. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.
We are delighted to provide the DPG30C200HB from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DPG30C200HB and other electronic components in the Small Signal Switching Diodes category and beyond.
DPG30C200HB V = 200 V RRM HiPerFRED I = 2x 15 A FAV t = 35 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Antiparallel diode for high frequency Industry standard outline Very low leakage current switching devices RoHS compliant Very short recovery time Antisaturation diode Epoxy meets UL 94V-0 Improved thermal behaviour Snubber diode Very low Irm-values Free wheeling diode Very soft recovery behaviour Rectifiers in switch mode power Avalanche voltage rated for reliable operation supplies (SMPS) Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b 2020 IXYS all rights reservedDPG30C200HB Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 2 0 0 V T = 25C 1 A R R VJ V = 2 0 0 V T = 1 5 0 C 0.08 mA R VJ forward voltage drop V I = 1 5 A T = 25C 1.25 V F F VJ I = 3 0 A 1.50 V F T = C 1.00 V I = 1 5 A 150 F VJ I = 3 0 A 1.27 V F average forward current T = 1 4 5 C T = 1 7 5 C 15 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.69 V threshold voltage F0 VJ for power loss calculation only slope resistance r 17.3 m F thermal resistance junction to case 1.7 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 90 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 240 A I R FSM VJ junction capacitance V = 1 5 0 V f = 1 MHz T = 25C 20 pF C J R VJ I max. reverse recovery current T = 25 C 3 A RM VJ I = 15 A V = 130 V T = 125C 6.5 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 35 ns t rr F VJ T = 125C 55 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b 2020 IXYS all rights reserved