DSEI 30 I = 30 A Fast Recovery FAVM V = 1000 V RRM Epitaxial Diode (FRED) t = 35 ns rr TM TO-247 AD ISOPLUS 247 C V V Type A RSM RRM Version A Version AR V V C C 1000 1000 DSEI 30-10A A 1000 1000 DSEI 30-10AR A Isolated C (TAB) back surface * A = Anode, C = Cathode * Patent pending Symbol Test Conditions Maximum Ratings Features International standard package I T = T 70 A FRMS VJ VJM I T = 85 C rectangular, d = 0.5 30 A JEDEC TO-247 AD FAVM C I t < 10 s rep. rating, pulse width limited by T 375 A Planar passivated chips FRM P VJM Very short recovery time I T = 45 C t = 10 ms (50 Hz), sine 200 A FSM VJ Extremely low switching losses t = 8.3 ms (60 Hz), sine 210 A Low I -values RM T = 150 C t = 10 ms (50 Hz), sine 185 A VJ Soft recovery behavior t = 8.3 ms (60 Hz), sine 195 A Epoxy meets UL 94V-0 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 200 A s Version AR isolated and VJ 2 t = 8.3 ms (60 Hz), sine 180 A s UL registered E153432 2 T = 150 C t = 10 ms (50 Hz), sine 170 A s VJ 2 t = 8.3 ms (60 Hz), sine 160 A s Applications T -40...+150 C VJ Antiparallel diode for high frequency T 150 C VJM switching devices T -40...+150 C stg Anti saturation diode P T = 25 C 138 W tot C Snubber diode Free wheeling diode in converters M * Mounting torque 0.8...1.2 Nm d F mounting force with clip 20...120 N and motor control circuits C Rectifiers in switch mode power V ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~ ISOL supplies (SMPS) Weight 6g Inductive heating and melting * Verson A only ** Version AR only Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Symbol Test Conditions Characteristic Values typ. max. Advantages I T = 25 CV = V 750 A R VJ R RRM T = 25 CV = 0.8 V 250 A High reliability circuit operation VJ R RRM T = 125 CV = 0.8 V 7mA VJ R RRM Low voltage peaks for reduced protection circuits V I = 36 A T = 150 C2V F F VJ Low noise switching T =25 C 2.4 V VJ Low losses V For power-loss calculations only 1.5 V T0 Operating at lower temperature or r T = T 12.5 m T VJ VJM space saving by reduced cooling R 0.9 K/W thJC R 0.25 K/W thCK R 35 K/W thJA t I = 1 A -di/dt = 100 A/ s V = 30 V T = 25 C35 50 ns rr F R VJ I V = 540 V I = 30 A -di /dt = 240 A/ s16 18 A RM R F F L 0.05 H T = 100 C VJ I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 026DSEI 30, 1000 V Fig. 1 Forward current Fig. 2 Recovery charge versus -di /dt. Fig. 3 Peak reverse current versus F versus voltage drop. -di /dt. F Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di /dt. Fig. 6 Peak forward voltage F junction temperature. versus di /dt. F Dimensions Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 2.2 2.54 0.087 0.102 Fig. 7 Transient thermal impedance junction to case. 2000 IXYS All rights reserved 2 - 2