DSEP60-12B IXYS

DSEP60-12B advanced V = 1200 V RRM HiPerFRED I = 60 A FAV t = 35 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP60-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Antiparallel diode for high frequency Industry standard outline Very low leakage current switching devices RoHS compliant Very short recovery time Antisaturation diode Epoxy meets UL 94V-0 Improved thermal behaviour Snubber diode Very low Irm-values Free wheeling diode Very soft recovery behaviour Rectifiers in switch mode power Avalanche voltage rated for reliable operation supplies (SMPS) Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161014a 2016 IXYS all rights reservedDSEP60-12B advanced Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 2 0 0 V T = 25C 200 A R R VJ V = 1 2 0 0 V T = 1 5 0 C 1 mA R VJ forward voltage drop V I = 6 0 A T = 25C 3.25 V F F VJ I = 1 2 0 A 3.90 V F T = C 2.20 V I = 6 0 A 150 F VJ I = 1 2 0 A 2.85 V F average forward current T = 1 1 0 C T = 1 7 5 C 60 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 1.10 V threshold voltage F0 VJ for power loss calculation only slope resistance r 15 m F thermal resistance junction to case 0.45 K/W R thJC thermal resistance case to heatsink K/W R 0.25 thCH P total power dissipation T = 25C 330 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 500 A I R FSM VJ junction capacitance V = 6 0 0 V f = 1 MHz T = 25C 30 pF C J R VJ I max. reverse recovery current T = 25 C 11 A RM VJ I = 60 A V = 600 V T = 100C 17 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 65 ns t rr F VJ T = 100C 190 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161014a 2016 IXYS all rights reserved