DSS16-0045AS IXYS

DSS 16-0045A DSS 16-0045AS I = 16 A Power Schottky Rectifier FAV V = 45 V RRM V = 0.57 V F TO-263 AB TO-220 AC V V Type RSM RRM A C (AS-Type) (A-Type) V V 45 45 DSS 16-0045A DSS 16-0045AS C (TAB) C A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 35 A FRMS Very low V F I T = 160 C rectangular, d = 0.5 16 A FAV C Extremely low switching losses Low I -values I T = 45C t = 10 ms (50 Hz), sine 280 A RM FSM VJ p Epoxy meets UL 94V-0 E I = 15 A L = 180 H T = 25C non repetitive 32 mJ AS AS VJ I V =1.5 V typ. f=10 kHz repetitive 1.5 A AR A RRM Applications Rectifiers in switch mode power (dv/dt) 1000 V/ s cr supplies (SMPS) T -55...+175 C VJ Free wheeling diode in low voltage T 175 C VJM converters T -55...+150 C stg P T = 25 C 105 W tot C Advantages High reliability circuit operation M mounting torque 0.4...0.6 Nm d Low voltage peaks for reduced Weight typical 2 g protection circuits Low noise switching Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see outlines.pdf I T = 25C V = V 0.5 mA R VJ R RRM T = 125C V = V 5mA VJ R RRM V I = 15 A T = 125C 0.57 V F F VJ I = 15 A T = 25C 0.67 V F VJ I = 30 A T = 125C 0.69 V F VJ R 1.4 K/W thJC R 0.5 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2000 IXYS All rights reserved 1 - 2 824DSS 16-0045A DSS 16-0045AS 100 100 10000 mA A pF 10 T =175C VJ I C R T I F 150C 1 125C 10 1000 0.1 100C T = VJ 175C 75C 150C 125C 0.01 25C 50C T = 25C VJ 25C 1 100 0.001 0.0 0.2 0.4 0.6 0.8 V 1.0 0 1020 3040 50 0 1020 3040 V V V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 40 25 10000 A W 35 20 A 30 I d=0.5 DC P F(AV) (AV) I FSM 25 d = 15 DC 20 1000 0.5 0.33 10 15 0.25 0.17 10 0.08 5 5 0 0 100 040 80 120 160C 05110250325035 A 10 100 1000 s 10000 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 D=0.5 K/W 0.33 Z thJC 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) DSS 16-0045A 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2000 IXYS All rights reserved 2 - 2 007