DSSK70-003B IXYS

DSSK 70-0015B I = 2x35 A Power Schottky Rectifier FAV V = 15 V RRM with common cathode V = 0.33 V F Preliminary Data AC A TO-247 AD V V Type RSM RRM V V A 15 15 DSSK 70-0015B C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V F I T = 130C rectangular, d = 0.5 35 A FAV C Extremely low switching losses I T = 130C rectangular, d = 0.5 per device 70 A FAV C Low I -values RM Epoxy meets UL 94V-0 I T = 45C t = 10 ms (50 Hz), sine 650 A FSM VJ p E I = tbd A L = 180 H T = 25C non repetitive tbd mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive tbd A AR A RRM Rectifiers in switch mode power supplies (SMPS) (dv/dt) tbd V/ s cr Free wheeling diode in low voltage T -55...+150 C VJ converters T 150 C VJM T -55...+150 C stg Advantages P T = 25C 115 W tot C High reliability circuit operation Low voltage peaks for reduced M mounting torque 0.8...1.2 Nm d protection circuits Weight typical 6 g Low noise switching Low losses Symbol Conditions Characteristic Values Dimensions see Outlines.pdf typ. max. I T = 25CV = V 20 mA R VJ R RRM T = 100CV = V 350 mA VJ R RRM V I = 35 A T = 125C 0.33 V F F VJ I = 35 A T =25C 0.45 V F VJ I = 70 A T = 125C 0.45 V F VJ R 1.1 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2002 IXYS All rights reserved 1 - 2 246DSSK 70-0015B 100 10000 1000 A T =150C pF VJ mA I R C 125C T I F 100 100C 10 75C 10 T = VJ 150C 125C 50C 25C 1 25C T = 25C VJ 1 1000 0.1 0.0 0.2 0.4 V 0.6 0 246 8 101214 V 02 46 8 101214 V V V V R R F Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 35 10000 80 W A 30 P (AV) A 60 25 I I F(AV) FSM d=0.5 DC 20 d = 1000 40 DC 15 0.5 0.33 0.25 10 20 0.17 0.08 5 0 100 0 A 0 102043006500 10 100 1000 s 10000 0 40 80 120 C 160 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 2 1 D=0.5 K/W 0.33 Z 0.25 thJC 0.17 Single Pulse 0.08 0.1 DSSK 70-0015B 0.01 0.0001 0.001 0.01 0.1 1 10 s t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2002 IXYS All rights reserved 2 - 2 246