IXA20RG1200DHGLB IXYS

IXA20RG1200DHGLB electronic component of IXYS
IXA20RG1200DHGLB IXYS
IXA20RG1200DHGLB IGBT Transistors
IXA20RG1200DHGLB  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXA20RG1200DHGLB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXA20RG1200DHGLB IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXA20RG1200DHGLB
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT IGBT Phaseleg
Datasheet: IXA20RG1200DHGLB Datasheet (PDF)
Price (USD)
1: USD 7.8128 ea
Line Total: USD 7.81 
Availability : 0
  
QtyUnit Price
1$ 7.8128
4$ 7.1521

Availability 0
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 13.5828
10$ 12.2123
25$ 11.8489
90$ 10.1769
540$ 9.3046
1035$ 8.7696
2520$ 8.4672


Availability 0
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.8128
4$ 7.1521

   
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We are delighted to provide the IXA20RG1200DHGLB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXA20RG1200DHGLB and other electronic components in the IGBT Transistors category and beyond.

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The IXA20RG1200DHGLB is an Insulated Gate Bipolar Transistor (IGBT), manufactured by IXYS Corporation. This IGBT uses IXYS' DirectBond Technology (DBTTM) to optimize performance, reduce electrical losses, improve switching performance and provide higher current capabilities. This part has a high blocking voltage of 1200 volts (Vce) and a low on-state voltage of 2.0 volts (Vcesat). Its Rg of 20Ohms helps to reduce switching losses for improved efficiency and its low gate charge Ciss of 0.7 nano-Coulombs (nC) makes it suitable for high-frequency switching. This device is designed to handle high currents of up to 80 Amps, making it a suitable choice for applications such as motor controllers and DC-DC converters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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