IXA33IF1200HB IXYS

IXA33IF1200HB electronic component of IXYS
IXA33IF1200HB IXYS
IXA33IF1200HB IGBT Transistors
IXA33IF1200HB  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXA33IF1200HB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXA33IF1200HB IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXA33IF1200HB
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT IGBT Copack
Datasheet: IXA33IF1200HB Datasheet (PDF)
Price (USD)
1: USD 14.796 ea
Line Total: USD 14.8 
Availability - 194
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 14.796
10$ 8.888
120$ 8.217

Availability 194
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 14.796
10$ 8.888
120$ 8.217

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXA33IF1200HB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXA33IF1200HB and other electronic components in the IGBT Transistors category and beyond.

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IXA33IF1200HB V= 1200V CES XPT IGBT I= 58A C25 VV= 1.8 CE(sat) Copack Part number IXA33IF1200HB Backside: collector 2(C) (G) 1 3(E) Features / Advantages: Applications: Package: TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT design (Xtreme light Punch Through) Medical equipment Epoxy meets UL 94V-0 results in: Uninterruptible power supply - short circuit rated for 10 sec. Air-conditioning systems - very low gate charge Welding equipment - low EMI Switched-mode and resonant-mode - square RBSOA 3x Ic power supplies Thin wafer technology combined with the XPT design Inductive heating, cookers results in a competitive low VCE(sat) Pumps, Fans SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20100702b 2010 IXYS all rights reservedIXA33IF1200HB Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V VJ CES max. DC gate voltage V 20 V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 58 A C25 C I T = 80 C 34 A C C80 total power dissipation P T = 25C 250 W tot C collector emitter saturation voltage V I = A V = 15 V25 T = 25C 1.8 2.1 V CE(sat) CGE VJ T = 125 C 2.1 V VJ gate emitter threshold voltage V I = 1mA V = V T = 25C 5.4 5.9 6.5 V VJ GE(th) CGECE collector emitter leakage current I V = V V = 0 V T = 25C 0.1 mA CES CE CES GE VJ T = 125 C 0.1 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 60 0 V V = 15 V I = 25 A 76 nC G(on) CE GE C turn-on delay time t 70 ns d(on) current rise time t 40 ns r inductive load T = 125 C VJ turn-off delay time t 250 ns d(off) V = 600 V I = 25 A CE C current fall time t 100 ns f V = 15 V R = 39 GE G turn-on energy per pulse E 2.5 mJ on turn-off energy per pulse E 3 mJ off reverse bias safe operating area RBSOA V = 15 V R = 39 T = 125 C GE G VJ A I V = 1200 V 75 CM CEmax short circuit safe operating area SCSOA V = 900 V CEmax short circuit duration t SC V = 900 V V = 15 V T = 125 C 10 s CE GE VJ short circuit current I R = 39 non-repetitive 100 A SC G thermal resistance junction to case R 0.5 K/W thJC thermal resistance case to heatsink K/W R 0.25 thCH Diode max. repetitive reverse voltage V T = 25C 1200 V VJ RRM forward current A I T = 25C 60 F25 C I T = 80 C 33 A F 80 C forward voltage V I = 30 A T = 25C 2.20 V F F VJ T = 125C 1.95 V VJ reverse current V = V mA I T = 25C * R R RRM VJ * not applicable, see Ices value above T = 125C * mA VJ reverse recovery charge Q 3.5 C rr V = 600 V R max. reverse recovery current I 30 A RM -di /dt = -60 0 A/s T = 125C F VJ reverse recovery time t 350 ns rr I = 30 A V = 0 V FGE reverse recovery energy E 0.9 mJ rec thermal resistance junction to case R 0.7 K/W thJC thermal resistance case to heatsink R K/W 0.25 thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20100702b 2010 IXYS all rights reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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