High Voltage, High Gain V = 3000V IXBH20N300 CES TM BIMOSFET Monolithic IXBT20N300 I = 20A C110 Bipolar MOS Transistor V 3.2V CE(sat) TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E V T = 25C to 150C 3000 V CES C C (Tab) V T = 25C to 150C, R = 1M 3000 V CGR J GE V Continuous 20 V TO-247 (IXBH) GES V Transient 30 V GEM I T = 25C 50 A C25 C I T = 110C 20 A C110 C I T = 25C, 1ms 140 A CM C G C C (Tab) SSOA V = 15V, T = 125C, R = 20 I = 130 A E GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V G = Gate C = Collector P T = 25C 250 W C C E = Emiiter Tab = Collector T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Weight TO-247 6 g High Blocking Voltage z TO-268 4 g Anti-Parallel Diode z International Standard Packages z Low Conduction Losses Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Advantages BV I = 250A, V = 0V 3000 V CES C GE z V I = 250A, V = V 2.5 5.0 V Low Gate Drive Requirement GE(th) C CE GE z High Power Density I V = 0.8 V , V = 0V 35 A CES CE CES GE T = 125C 1.5 mA J I V = 0V, V = 20V 100 nA GES CE GE Applications: V I = 20A, V = 15V, Note 1 2.7 3.2 V CE(sat) C GE z Switch-Mode and Resonant-Mode T = 125C 3.2 V J Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generators z Capacitor Discharge Circuits z AC Switches 2012 IXYS CORPORATION, All Rights Reserved DS100124A(12/12) IXBH20N300 IXBT20N300 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 11 18 S fS C CE C 2230 pF ies C V = 25V, V = 0V, f = 1MHz 92 pF oes CE GE C 33 pF res Q 105 nC g Q I = 20A, V = 15V, V = 1000V 13 nC ge C GE CE Q 45 nC Terminals: 1 - Gate 2,4 - Collector gc 3 - Emitter t 64 ns d(on) Resistive Switching Times, T = 25C J t 210 ns r I = 20A, V = 15V C GE t 300 ns d(off) V = 1250V, R = 10 CE G t 504 ns f t 68 ns d(on) Resistive Switching Times, T = 125C J t 540 ns r I = 20A, V = 15V C GE t 300 ns d(off) V = 1250V, R = 10 CE G t 395 ns f R 0.50 C/W thJC R (TO-247) 0.21 C/W thCS TO-247 Outline Reverse Diode P Symbol Test Conditions Characteristic Values 1 2 3 (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V 2.1 V F F GE t 1.35 s I = 10A, V = 0V, -di /dt = 100A/s rr F GE F I V = 100V, V = 0V 30 A RM R GE e Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 Note 1: Pulse test, t 300 s, duty cycle, d 2%. A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537