High Voltage, High Gain V = 2500V IXBK64N250 CES TM BiMOSFET I = 64A IXBX64N250 C110 V 3.0V CE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings C E V T = 25C to 150C 2500 V CES J Tab V T = 25C to 150C, R = 1M 2500 V CGR J GE V Continuous 25 V TM GES PLUS247 (IXBX) V Transient 35 V GEM I T = 25C (Chip Capability) 156 A C25 C I Lead Current Limit, RMS 120 A LRMS I T = 110C 64 A G C100 C C I T = 25C, 1ms 600 A Tab CM C E SSOA V = 15V, T = 125C, R = 1 I = 160 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load V < 0.8 V CE CES E = Emitter Tab = Collector T V = 15V, T = 125C, SC GE J (SCSOA) R = 5, V = 1250V, Non-Repetitive 10 s G CE P T = 25C 735 W C C T -55 ... +150 C Features J T 150 C JM z High Blocking Voltage T -55 ... +150 C z stg Low Switching Losses z High Current Handling Capability T Maximum Lead Temperature for Soldering 300 C L z T 1.6 mm (0.062 in.) from Case for 10 260 C Anti-Parallel Diode SOLD M Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb. C Advantages Weight TO-264 10 g z PLUS247 6 g High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 1mA, V = 0V 2500 V CES C GE z Switch-Mode and Resonant-Mode V I = 4mA, V = V 3.0 5.0 V GE(th) C CE GE Power Supplies z Uninterrupted Power Supplies (UPS) I V = 0.8 V , V = 0V 50 A CES CE CES GE z Capacitor Discharge Circuits T = 125C 6 mA J z Laser Generators I V = 0V, V = 25V 200 nA GES CE GE V I = I , V = 15V, Note 1 2.5 3.0 V CE(sat) C C110 GE T = 125C 3.1 V J DS99832B(08/11) 2011 IXYS CORPORATION, All Rights Reserved IXBK64N250 IXBX64N250 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 40 72 S fS C C110 CE C 8900 pF ies C V = 25V, V = 0V, f = 1MHz 345 pF oes CE GE C 118 pF res Q 400 nC g Q I = I , V = 15V, V = 600V 46 nC ge C C110 GE CE Terminals: 1 - Gate 2 - Collector Q 155 nC gc 3 - Emitter 4 - Collector t 49 ns d(on) Millimeter Inches Resistive Switching Times, T = 25C Dim. J Min. Max. Min. Max. t 318 ns r A 4.82 5.13 .190 .202 I = 128A, V = 15V, tp = 1s C GE A1 2.54 2.89 .100 .114 t 232 ns d(off) A2 2.00 2.10 .079 .083 V = 1250V, R = 1 CE G b 1.12 1.42 .044 .056 t 170 ns f b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 t 54 ns d(on) c 0.53 0.83 .021 .033 Resistive Switching Times, T = 125C J D 25.91 26.16 1.020 1.030 t 578 ns r E 19.81 19.96 .780 .786 I = 128A, V = 15V, tp = 1s C GE e 5.46 BSC .215 BSC 222 ns t d(off) J 0.00 0.25 .000 .010 V = 1250V, R = 1 CE G t 175 ns K 0.00 0.25 .000 .010 f L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 R 0.17 C/W thJC P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 R 0.15 C/W thCS Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 TM PLUS247 Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = I , V = 0V, Note 1 3.0 V F F C110 GE t 160 ns rr I = I , V = 0V, -di /dt = 650A/s F C110 GE F I V = 600V, V = 0V 480 A RM R GE Terminals: 1 - Gate 2 - Collector 3 - Emitter Note 1: Pulse test, t 300 s, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. Additional provisions for lead-to-lead isolation are required at V >1200V. CE A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537