IXDR 30N120 D1 IXDR 30N120 V = 1200 V High Voltage IGBT CES I =50A C25 with optional Diode V = 2.4 V CE(sat) typ TM ISOPLUS package (Electrically Isolated Back Side) TM C C ISOPLUS 247 Short Circuit SOA Capability E153432 Square RBSOA G G G C E E E Isolated Backside* IXDR 30N120 IXDR 30N120 D1 G = Gate C = Collector E = Emitter Symbol Conditions Maximum Ratings Features NPT IGBT technology V T = 25C to 150C 1200 V CES J - high switching speed V T = 25C to 150C R = 20 k 1200 V CGR J GE - low switching losses - square RBSOA, no latch up V Continuous 20 V GES - high short circuit capability V Transient 30 V GEM - positive temperature coefficient for easy paralleling I T = 25C 50 A C25 C - MOS input, voltage controlled I T = 90C 30 A C90 C - fast recovery epitaxial diode I T = 90C, t = 1 ms 60 A Epoxy meets UL 94V-0 CM C p Isolated and UL registered E153432 RBSOA V = 15 V, T = 125C, R = 47 I = 50 A GE J G CM Clamped inductive load, L = 30 mH V < V CEK CES Advantages t V = 15 V, V = V , T = 125C 10 s SC GE CE CES J DCB Isolated mounting tab (SCSOA) R = 47 , non repetitive G Meets TO-247AD package Outline Package for clip or spring mounting P T = 25C IGBT 200 W C C Space savings Diode 95 W High power density T -55 ... +150 C J Typical Applications T -55 ... +150 C stg AC motor speed control V 50/60 Hz, RMS I < 1 mA 2500 V~ ISOL ISOL DC servo and robot drives DC choppers Weight 6g Uninteruptible power supplies (UPS) Switch-mode and resonant-mode Symbol Conditions Characteristic Values power supplies (T = 25C, unless otherwise specified) J min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 1 mA, V = V 4.5 6.5 V GE(th) C CE GE I V = V ,T = 25C 1.5 mA CES CE CES J T = 125C 2.5 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 30 A, V = 15 V 2.4 2.9 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions 2006 IXYS All rights reserved 1 - 4 0644IXDR 30N120 D1 IXDR 30N120 Symbol Conditions Characteristic Values TM ISOPLUS247 OUTLINE (T = 25C, unless otherwise specified) J min. typ. max. C 1650 pF ies C V = 25 V, V = 0 V, f = 1 MHz 250 pF oes CE GE C 110 pF res Q I = 30 A, V = 15 V, V = 0.5 V 120 nC g C GE CE CES t 100 ns d(on) t 70 ns r Inductive load, T = 125C J t 500 ns d(off) I = 30 A, V = 15 V, C GE t 70 ns f V = 600 V, R = 47 CE G E 4.6 mJ on E 3.4 mJ off R 0.6 K/W thJC R Package with heatsink compound 0.25 K/W thCH Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. V I = 30 A, V = 0 V 2.5 2.75 V F F GE I = 30 A, V = 0 V, T = 125C 2.0 V F GE J I T = 25C 50 A F C The convex bow of substrate is typ. < 0.04 mm over plastic surface level T = 90C 27 A of device bottom side C This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. I I = 30 A, -di /dt = 400 A/s, V = 600 V 20 A RM F F R t V = 0 V, T = 125C 200 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 1.3 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions 2006 IXYS All rights reserved 2 - 4 0644