IXFN120N65X2 IXYS

IXFN120N65X2 electronic component of IXYS
IXFN120N65X2 IXYS
IXFN120N65X2 Discrete Semiconductor Modules
IXFN120N65X2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFN120N65X2 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXFN120N65X2 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. IXFN120N65X2
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 650V/108A Ultra Junction X2-Class
Datasheet: IXFN120N65X2 Datasheet (PDF)
Price (USD)
1: USD 43.34 ea
Line Total: USD 43.34 
Availability : 269
  
Ship by Thu. 09 Oct to Mon. 13 Oct
QtyUnit Price
1$ 43.34
10$ 38.511
100$ 35.728
5000$ 35.728
10000$ 35.728
25000$ 35.728

Availability 269
Ship by Thu. 09 Oct to Mon. 13 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 43.34
10$ 38.511
100$ 35.728
5000$ 35.728
10000$ 35.728
25000$ 35.728

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Brand
Forward Transconductance - Min
Transistor Polarity
Channel Mode
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Qg - Gate Charge
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Subcategory
Tradename
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the IXFN120N65X2 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFN120N65X2 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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TM X2-Class HiPerFET V = 650V IXFN120N65X2 DSS Power MOSFET I = 108A D25 R 24m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25 C 108 A D25 C I T = 25 C, Pulse Width Limited by T 240 A DM C JM G = Gate D = Drain S = Source I T = 25 C 15 A A C E T = 25 C 3.5 J AS C P T = 25 C 890 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM T -55 ... +150 C International Standard Package stg miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL Isolation I 1mA t = 1 second 3000 V~ ISOL Isolation Voltage 2500 V~ High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Fast Intrinsic Diode Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Weight 30 g Low R DS(on) Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 3mA 650 V DSS GS D Applications V V = V , I = 8mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies I V = V , V = 0V 50 A DC-DC Converters DSS DS DSS GS T = 125 C 5 mA PFC Circuits J AC and DC Motor Drives R V = 10V, I = 60A, Note 1 24 m DS(on) GS D Robotics and Servo Controls 2020 IXYS CORPORATION, All Rights Reserved DS100690C(1/20)IXFN120N65X2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 46 76 S fs DS D R Gate Input Resistance 0.74 Gi C 14 nF iss C V = 0V, V = 25V, f = 1MHz 8700 pF oss GS DS C 5.5 pF rss Effective Output Capacitance C 455 pF Energy related V = 0V o(er) GS C V = 0 . 8 V 1930 pF o(tr) Time related DS DSS t 39 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 82 ns d(off) R = 1 (External) G t 12 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 60A 87 nC gs GS DS DSS D Q 65 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 220 ns rr I = 60A, -di/dt = 100A/ s F Q 2.3 C RM V = 100V, V = 0V R GS I 21.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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