The IXFN38N100Q2 is a Discrete Semiconductor Module manufactured by IXYS. It is a single-phase, four-pair, very fast recovery insulated-gate bipolar transistor (IGBT) module with low on-resistance rating of 0.25 ohms and a maximum DC collector current rating of 38 amps. It is designed for use in medium- to high-power applications, such as motor control, inverter, welders, and automotive. The IGBTs are rated for a breakdown voltage of 1000 volts (Vces). This module includes snubberless technology and is optimized for high repetition switch frequencies. The integrated gate drivers feature dual inputs and level-shift optimization.