TM GigaMOS Trench V = 100V IXFN420N10T DSS TM HiperFET I = 420A D25 R 2.3m Power MOSFET DS(on) t 140ns rr N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C, R = 1M 100 V DGR J GS S V Continuous 20 V GSS D V Transient 30 V GSM I T = 25 C (Chip Capability) 420 A D25 C G = Gate D = Drain I External Lead Current Limit 200 A S = Source L(RMS) I T = 25 C, Pulse Width Limited by T 1000 A DM C JM I T = 25 C 100 A Either Source Terminal S can be used as A C the Source Terminal or the Kelvin Source E T = 25 C5J AS C ( Gate Return ) Terminal. dV/dt I I , V V , T 175C 20 V/ns S DM DD DSS J Features P T = 25 C 1070 W D C T -55 ... +175 C International Standard Package J T 175 C miniBLOC, with Aluminium Nitride JM T -55 ... +175 C stg Isolation Isolation Voltage 2500 V~ V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL High Current Handling Capability I 1mA t = 1 second 3000 V~ ISOL Fast Intrinsic Diode M Mounting Torque 1.5/13 Nm/lb.in d Avalanche Rated Terminal Connection Torque 1.3/11.5 Nm/lb.in Low R DS(on) Weight 30 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 100 V Synchronous Recification DSS GS D DC-DC Converters V V = V , I = 8mA 2.5 5.0 V GS(th) DS GS D Battery Chargers I V = 20V, V = 0V 200 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 50 A DSS DS DSS GS DC Choppers T = 150C 5 mA J AC Motor Drives R V = 10V, I = 60A, Note 1 2.3 m Uninterruptible Power Supplies DS(on) GS D High Speed Power Switching Applications 2015 IXYS CORPORATION, All Rights Reserved DS100199A(7/15) IXFN420N10T Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 110 185 S fs DS D C 47 nF iss C V = 0V, V = 25V, f = 1MHz 4390 pF oss GS DS C 530 pF rss R Gate Input Resistance 1.46 Gi t 47 ns d(on) Resistive Switching Times t 155 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 115 ns d(off) R = 1 (External) G t 255 ns f (M4 screws (4x) supplied) Q 670 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 170 nC gs GS DS DSS D D25 Q 195 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 420 A S GS I Repetitive, Pulse Width Limited by T 1680 A SM JM V I = 60A, V = 0V, Note 1 1.2 V SD F GS t 140 ns I = 150A, V = 0V rr F GS Q 0.38 C RM -di/dt = 100A/ s I 7.00 A V = 60V RM R Note 1. Pulse test, t 300s duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537