TM V I R HiPerFET DSS D25 DS(on) IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 t 250 ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN V T = 25C to 150C 500 500 V DSS J V T = 25C to 150C R = 1 M 500 500 V DGR J GS G (TAB) D V Continuous 20 20 V GS S V Transient 30 30 V GSM I T = 25C 44N50 44 44 A D25 C 48N50 48 48 A miniBLOC, SOT-227 B (IXFN) E153432 I T = 25C, 44N50 176 176 A S DM C pulse width limited by T 48N50 192 192 A JM G D I T = 25C2424A AR C E T = 25C3030mJ G AR C S dv/dt I I , di/dt 100 A/ s, V V , 5 5 V/ns S DM DD DSS S D T 150C, R = 2 S J G G = Gate D = Drain P T = 25C 500 520 W D C S = Source TAB = Drain T -55 ... +150 C J Either Source terminal at miniBLOC can be used T 150 C as Main or Kelvin Source JM T -55 ... +150 C stg Features T 1.6 mm (0.063 in) from case for 10 s 300 - C L International standard packages V 50/60 Hz, RMS t = 1 min - 2500 V~ Molding epoxies meet UL 94 V-0 ISOL I 1 mA t = 1 s - 3000 V~ flammability classification ISOL SOT-227B miniBLOC with aluminium M Mounting torque 0.9/6 1.5/13 Nm/lb.in. d nitride isolation Terminal connection torque - 1.5/13 Nm/lb.in. TM Low R HDMOS process DS (on) Unclamped Inductive Switching (UIS) Weight 10 30 g rated Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Applications min. typ. max. DC-DC converters V V = 0 V, I = 1 mA 500 V Synchronous rectification DSS GS D Battery chargers V V = V , I = 8 mA 2 4 V GS(th) DS GS D Switched-mode and resonant-mode I V = 20 V , V = 0 200 nA power supplies GSS GS DC DS DC choppers I V = 0.8 V T = 25C 400 A DSS DS DSS J Temperature and lighting controls V = 0 V T = 125C2mA GS J R V = 10 V, I = 0.5 I 44N50 0.12 Advantages DS(on) GS D D25 48N50 0.10 Easy to mount Pulse test, t 300 s, duty cycle d 2 % Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 93001I (07/00) 2000 IXYS All rights reserved C1 - 184IXFN / IXFK 44N50 IXFN / IXFK 48N50 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 22 42 S fs DS D D25 C 8400 pF iss C V = 0 V, V = 25 V, f = 1 MHz 900 pF oss GS DS C 280 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 60 ns r GS DS DSS D D25 t R = 1 (External), 100 ns d(off) G t 30 ns f Dim. Millimeter Inches Q 270 nC g(on) Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 0.5 I 60 nC A 4.82 5.13 .190 .202 gs GS DS DSS D D25 A1 2.54 2.89 .100 .114 Q 135 nC gd A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 R TO-264 AA 0.25 K/W b1 2.39 2.69 .094 .106 thJC b2 2.90 3.09 .114 .122 R TO-264 AA 0.15 K/W thCK c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R miniBLOC, SOT-227 B 0.24 K/W E 19.81 19.96 .780 .786 thJC e 5.46 BSC .215 BSC R miniBLOC, SOT-227 B 0.05 K/W thCK J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 Source-Drain Diode Characteristic Values P 3.17 3.66 .125 .144 (T = 25C, unless otherwise specified) J Q 6.07 6.27 .239 .247 Symbol Test Conditions min. typ. max. Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 I V = 0 V 48 A S 6.04 6.30 .238 .248 S GS T 1.57 1.83 .062 .072 I Repetitive pulse width limited by T 192 A SM JM miniBLOC, SOT-227 B V I = 100 A, V = 0 V, 1.5 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t 250 ns rr Q I = I , -di/dt = 100 A/ s, V = 100 V TBD C RM F S R I 20 A RM M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 C1 - 185 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025