X-On Electronics has gained recognition as a prominent supplier of IXGA28N60A3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGA28N60A3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGA28N60A3 IXYS

IXGA28N60A3 electronic component of IXYS
IXGA28N60A3 IXYS
IXGA28N60A3 IGBT Transistors
IXGA28N60A3  Semiconductors

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See Product Specifications
Part No. IXGA28N60A3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors Disc IGBT PT-Low Frequency TO-263D2
Datasheet: IXGA28N60A3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1608 ea
Line Total: USD 3.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 3.1608
3 : USD 2.0195
14 : USD 1.9366
50 : USD 1.9262

   
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We are delighted to provide the IXGA28N60A3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGA28N60A3 and other electronic components in the IGBT Transistors category and beyond.

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The IXGA28N60A3 by IXYS is a Discrete Insulated Gate Bipolar Transistor (IGBT) with a TO-263D2 package type. This device is optimized for low frequency applications and offers low on-state voltage drop with a high current capability. It has a maximum current rating of 28A and operating voltage of 600V. It is designed to provide excellent dynamic performance, providing fast switching speeds and a low switch capacitance. Additionally, it features a built-in temperature control circuit, which increases safety and reliability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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