TM V = 1200V GenX3 1200V IXGA30N120B3 CES I = 30A IGBTs IXGP30N120B3 C110 V 3.5V CE(sat) IXGH30N120B3 t = 204ns fi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 1200 V CES C V T = 25C to 150C, R = 1M 1200 V CGR J GE TO-220 (IXGP) V Continuous 20 V GES V Transient 30 V GEM I T = 25C 60 A C25 C I T = 110C 30 A C110 C G I T = 25C, 1ms 150 A C C (Tab) CM C E SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V V TO-247 (IXGH) CE CES P T = 25C 300 W C C T - 55 ... +150 C J T 150 C JM G C T - 55 ... +150 C C (Tab) stg E T 1.6mm (0.062 in.) from Case for 10s 300 C L G = Gate C = Collector T Plastic Body for 10 seconds 260 C SOLD E = Emitter Tab = Collector M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d Weight TO-263 2.5 g Features TO-220 3.0 g TO-247 6.0 g z Optimized for Low Conduction and Switching Losses z Square RBSOA z International Standard Packages Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High Power Density BV I = 250A, V = 0V 1200 V CES C GE z Low Gate Drive Requirement V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Applications I V = V , V = 0V 100 A CES CE CES GE T = 125C 1 mA z J Power Inverters z UPS I V = 0V, V = 20V 100 nA GES CE GE z Motor Drives z V I = 30A, V = 15V, Note 1 2.96 3.5 V SMPS CE(sat) C GE T = 125C 2.95 V z J PFC Circuits z Welding Machines 2009 IXYS CORPORATION, All Rights Reserved DS99730B(10/09)IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 Symbol Test Conditions Characteristic Values TO-220 (IXGP) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 11 19 S fs C CE C 1750 pF ies C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 46 pF res Q 87 nC g Q I = 30A, V = 15V, V = 0.5 V 15 nC ge C GE CE CES Q 39 nC gc t 16 ns d(on) t 37 ns Inductive load, T = 25C ri J Pins: 1 - Gate 2 - Drain E 3.47 mJ I = 30A, V = 15V 3 - Source 4 - Drain on C GE t 127 200 ns V = 0.8 V , R = 5 d(off) CE CES G t 204 380 ns Notes 2 fi E 2.16 4.0 mJ off t 18 ns d(on) Inductive load, T = 125C J t 38 ns ri I = 30A,V = 15V E C GE 6.70 mJ on V = 0.8 V ,R = 5 t 216 ns CE CES G d(off) Notes 2 t 255 ns fi E 5.10 mJ off R 0.42 C/W thJC R TO-220 0.50 C/W TO-247 (IXGH) AD Outline thCS R TO-247 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G TO-263 (IXGA) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 1 = Gate b 0.51 0.99 .020 .039 2 = Collector b2 1.14 1.40 .045 .055 3 = Emitter c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Collector L 14.61 15.88 .575 .625 3. Emitter L1 2.29 2.79 .090 .110 4. Collector L2 1.02 1.40 .040 .055 Bottom Side L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537