V = 3000V High Voltage IGBT IXGF20N300 CES For Capacitor Discharge I = 22A C25 Applications V 3.2V CE(sat) ( Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3000 V CES J V T = 25C to 150C, R = 1M 3000 V CGR J GE 1 2 V Continuous 20 V GES Isolated Tab 5 V Transient 30 V GEM I T = 25C 22 A 1 = Gate 5 = Collector C25 C 2 = Emitter I T = 90C 14 A C90 C I T = 25C, V = 20V, 1ms 103 A CM C GE SSOA V = 20V, T = 125C, R = 10 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES Features P T = 25C 100 W C C Silicon Chip on Direct-Copper Bond T -55 ... +150 C J (DCB) Substrate T 150 C JM Isolated Mounting Surface T -55 ... +150 C stg 4000V Electrical Isolation High Peak Current Capability T 1.6 mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C Low Saturation Voltage SOLD Molding Epoxies Meet UL 94 V-0 F Mounting Force 20..120/4.5..27 Nm/lb-in. C Flammability Classification V 50/60Hz, 1 Minute 4000 V~ ISOL Weight 6g Applications Capacitor Discharge Symbol Test Conditions Characteristic Values Pulser Circuits (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 3000 V CES C GE Advantages V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V , V = 0V 25 A CES CE CES GE High Power Density Note 2, T = 125C 2 mA J Easy to Mount I V = 0V, V = 20V 100 nA GES CE GE V I = 20A, V = 15V, Note 1 3.2 V CE(sat) C GE 2009 IXYS CORPORATION, All Rights Reserved DS100099B(11/09)IXGF20N300 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 8 12 S fs C CE I V = 20V, V = 20V, Note 1 180 A C(ON) GE CE C 1125 pF ies C V = 25V, V = 0V, f = 1MHz 48 pF oes CE GE C 16 pF res Q 31 nC g Q I = 20A, V = 15V, V = 600V 5.8 nC ge C GE CE Q 12 nC gc t 38 ns d(on) Resistive Switching Times Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector t 486 ns r I = 20A, V = 15V Tab 4 = Isolated C GE t 145 ns d(off) V = 960V, R = 10 CE G t 210 ns f R 1.25 C/W thJC R 0.15 C/W thCS R 30 C/W thJA Notes: 1. Pulse test, t < 300 s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537