TM IXGH 30N60BD1 HiPerFAST IGBT V = 600 V CES IXGT 30N60BD1 I = 60 A with Diode C25 V = 1.8 V CE(sat) t = 100 ns fi(typ) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) V T = 25 C to 150 C 600 V CES J G V T = 25 C to 150 C R = 1 M 600 V CGR J GE E V Continuous 20 V GES C (TAB) V Transient 30 V GEM I T = 25 C60A TO-247 AD C25 C (IXGH) I T = 90 C30A C90 C I T = 25 C, 1 ms 120 A CM C G C SSOA V = 15 V, T = 125 C, R = 10 I = 60 A GE VJ G CM E C (TAB) (RBSOA) Clamped inductive load, L = 100 H 0.8 V CES P T = 25 C 200 W C C G = Gate, C = Collector, E = Emitter, TAB = Collector T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg International standard package Maximum Lead and Tab temperature for soldering 300 C Moderate frequency IGBT and 1.6 mm (0.062 in.) from case for 10 s antiparallel FRED in one package High current handling capability M Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. d TM Newest generation HDMOS Weight TO-247 AD 6 g process TO-268 4 g MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives Symbol Test Conditions Characteristic Values DC choppers (T = 25 C, unless otherwise specified) J Uninterruptible power supplies (UPS) min. typ. max. Switch-mode and resonant-mode power supplies BV I = 250 A, V = 0 V 600 V CES C GE V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE Advantages I V = 0.8 V T = 25 C 200 A CES CE CES J Space savings (two devices in one V = 0 V T = 150 C3mA GE J package) High power density I V = 0 V, V = 20 V 100 nA GES CE GE Optimized V and switching ce(sat) speeds for medium frequency V I = I , V = 15 V 1.8 V CE(sat) C C90 GE application IXYS reserves the right to change limits, test conditions, and dimensions. 98510C (7/00) 2000 IXYS All rights reserved 1 - 5IXGH 30N60BD1 IXGT 30N60BD1 Symbol Test Conditions Characteristic Values TO-247 AD (IXGH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 25 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 2700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 240 pF oes CE GE C 50 pF res Q 110 nC g Q I = I , V = 15 V, V = 0.5 V 22 nC ge C C90 GE CE CES Q 40 nC gc t 25 ns Inductive load, T = 25 C d(on) J Dim. Millimeter Inches t 30 ns I = I , V = 15 V, L = 100 H, ri C C90 GE Min. Max. Min. Max. V = 0.8 V , R = R = 4.7 t CE CES G off 130 220 ns A 19.81 20.32 0.780 0.800 d(off) B 20.80 21.46 0.819 0.845 Remarks: Switching times may t 100 190 ns fi increase for V (Clamp) > 0.8 V , C 15.75 16.26 0.610 0.640 CE CES E 1.0 2.0 mJ D 3.55 3.65 0.140 0.144 off higher T or increased R J G E 4.32 5.49 0.170 0.216 t 25 ns d(on) F 5.4 6.2 0.212 0.244 Inductive load, T = 150 C J t 35 ns G 1.65 2.13 0.065 0.084 ri I = I , V = 15 V, L = 100 H C C90 GE H - 4.5 - 0.177 E 1.0 mJ on V = 0.8 V , R = R = 4.7 CE CES G off J 1.0 1.4 0.040 0.055 t 200 ns K 10.8 11.0 0.426 0.433 d(off) Remarks: Switching times may L 4.7 5.3 0.185 0.209 t 230 ns increase for V (Clamp) > 0.8 V , fi CE CES M 0.4 0.8 0.016 0.031 higher T or increased R J G E 2.5 mJ off N 1.5 2.49 0.087 0.102 R 0.62 K/W thJC R (TO-247 AD) 0.25 K/W 3 thCK TO-268AA (D PAK) Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, Pulse test T = 150 C 1.6 V F F C90 GE J t 300 s, duty cycle d 2 % 2.5 V I I = I , V = 0 V, -di /dt = 100 A/ s6 A RM F C90 GE F t V = 100 V T =100 C 100 ns rr R J I = 1 A -di/dt = 100 A/ s V = 30 V 25 ns F R R 0.9 K/W thJC Dim. Millimeter Inches Min. Max. Min. Max. Min. Recommended Footprint A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 5 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025