X-On Electronics has gained recognition as a prominent supplier of IXGH30N60C2 igbt transistors across the USA, India, Europe, Australia, and various other global locations. IXGH30N60C2 igbt transistors are a product manufactured by IXYS. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

IXGH30N60C2 IXYS

IXGH30N60C2 electronic component of IXYS
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See Product Specifications
Part No.IXGH30N60C2
Manufacturer: IXYS
Category:IGBT Transistors
Description: IGBT Transistors 30 Amps 600V 2.7 V Rds
Datasheet: IXGH30N60C2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.5007 ea
Line Total: USD 3.5

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 3.5007
10 : USD 3.3438
25 : USD 3.1386
100 : USD 2.6195
250 : USD 2.366
500 : USD 2.3177

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
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We are delighted to provide the IXGH30N60C2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGH30N60C2 and other electronic components in the IGBT Transistors category and beyond.

TM V = 600 V IXGH 30N60C2 HiPerFAST IGBT CES I = 70 A IXGT 30N60C2 C25 V = 2.7 V C2-Class High Speed IGBTs CE(sat) t = 32 ns fi typ TO-268 (IXGT) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V G CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (limited by leads) 70 A TO-247 (IXGH) C25 C I T = 110C30A C110 C I T = 25C, 1 ms 150 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 60 A C (TAB) GE VJ G CM G (RBSOA) Clamped inductive load 600 V C E P T = 25C 190 W C C G = Gate, C = Collector, T -55 ... +150 C J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s z Very high frequency IGBT Plastic body for 10s 250 C z Square RBSOA z High current handling capability M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. d z MOS Gate turn-on Weight TO-247 6 g - drive simplicity TO-268 4 g Applications z PFC circuits z Uninterruptible power supplies (UPS) Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. z AC motor speed control z DC servo and robot drives V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE z DC choppers I V = V T = 25C50 A CES CE CES J V = 0 V T = 150C1mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = 24 A, V = 15 V T = 25C 2.7 V CE(sat) C GE J T = 25C 2.0 V J 2005 IXYS All rights reserved DS99168A(01/05)IXGH 30N60C2 IXGT 30N60C2 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 24 A V = 10 V, 18 28 S fs C CE Pulse test, t 300 s, duty cycle 2 % P C 1430 pF ies C V = 25 V, V = 0 V, f = 1 MHz 110 pF oes CE GE C 40 pF res Q 70 nC g e Q I = 24 A, V = 15 V, V = 300 V 10 nC ge C GE CE Dim. Millimeter Inches Q 23 nC Min. Max. Min. Max. gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 t 13 ns 1 d(on) A 2.2 2.6 .059 .098 2 Inductive load, T = 25C t 15 ns J ri b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 I = 24 A, V = 15 V 1 t 70 140 ns C GE d(off) b 2.87 3.12 .113 .123 2 V = 400 V, R = 5 CE G t 60 ns C .4 .8 .016 .031 fi D 20.80 21.46 .819 .845 E 0.29 0.30 mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 13 ns L 19.81 20.32 .780 .800 d(on) L1 4.50 .177 t 17 ns ri Inductive load, T = 125C P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 E 0.22 mJ on I = 24 A, V = 15 V C GE R 4.32 5.49 .170 .216 t 120 ns d(off) S 6.15 BSC 242 BSC V = 400 V, R = 5 CE G t 130 ns fi E 0.59 mJ TO-268 Outline off R 0.65 K/W thJC R (TO-247) 0.25 K/W thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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