Product Information

IXGH30N60C2

IXGH30N60C2 electronic component of IXYS

Datasheet
IGBT Transistors 30 Amps 600V 2.7 V Rds

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.393 ea
Line Total: USD 3.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.393
10 : USD 3.2409
25 : USD 3.042
100 : USD 2.5389
250 : USD 2.2932
500 : USD 2.2464

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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TM V = 600 V IXGH 30N60C2 HiPerFAST IGBT CES I = 70 A IXGT 30N60C2 C25 V = 2.7 V C2-Class High Speed IGBTs CE(sat) t = 32 ns fi typ TO-268 (IXGT) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V G CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (limited by leads) 70 A TO-247 (IXGH) C25 C I T = 110C30A C110 C I T = 25C, 1 ms 150 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 60 A C (TAB) GE VJ G CM G (RBSOA) Clamped inductive load 600 V C E P T = 25C 190 W C C G = Gate, C = Collector, T -55 ... +150 C J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s z Very high frequency IGBT Plastic body for 10s 250 C z Square RBSOA z High current handling capability M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. d z MOS Gate turn-on Weight TO-247 6 g - drive simplicity TO-268 4 g Applications z PFC circuits z Uninterruptible power supplies (UPS) Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. z AC motor speed control z DC servo and robot drives V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE z DC choppers I V = V T = 25C50 A CES CE CES J V = 0 V T = 150C1mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = 24 A, V = 15 V T = 25C 2.7 V CE(sat) C GE J T = 25C 2.0 V J 2005 IXYS All rights reserved DS99168A(01/05)IXGH 30N60C2 IXGT 30N60C2 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 24 A V = 10 V, 18 28 S fs C CE Pulse test, t 300 s, duty cycle 2 % P C 1430 pF ies C V = 25 V, V = 0 V, f = 1 MHz 110 pF oes CE GE C 40 pF res Q 70 nC g e Q I = 24 A, V = 15 V, V = 300 V 10 nC ge C GE CE Dim. Millimeter Inches Q 23 nC Min. Max. Min. Max. gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 t 13 ns 1 d(on) A 2.2 2.6 .059 .098 2 Inductive load, T = 25C t 15 ns J ri b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 I = 24 A, V = 15 V 1 t 70 140 ns C GE d(off) b 2.87 3.12 .113 .123 2 V = 400 V, R = 5 CE G t 60 ns C .4 .8 .016 .031 fi D 20.80 21.46 .819 .845 E 0.29 0.30 mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 13 ns L 19.81 20.32 .780 .800 d(on) L1 4.50 .177 t 17 ns ri Inductive load, T = 125C P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 E 0.22 mJ on I = 24 A, V = 15 V C GE R 4.32 5.49 .170 .216 t 120 ns d(off) S 6.15 BSC 242 BSC V = 400 V, R = 5 CE G t 130 ns fi E 0.59 mJ TO-268 Outline off R 0.65 K/W thJC R (TO-247) 0.25 K/W thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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