Advance Technical Information TM IXGH 35N120B V = 1200 V HiPerFAST IGBT CES IXGT 35N120B I = 70 A C2 V = 3.3 V CE(sat) t = 160 ns fi(typ) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) V T = 25 C to 150 C 1200 V CES J V T = 25 C to 150 C R = 1 M 1200 V CGR J GE G E V Continuous 20 V GES C (TAB) V Transient 30 V GEM I T = 25 C70A C25 C TO-247 AD (IXGH) I T = 90 C35A C90 C I T = 25 C, 1 ms 140 A CM C SSOA V = 15 V, T = 125 C, R = 5 I = 90 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V C (TAB) CES G C P T = 25 C 300 W E C C T -55 ... +150 C J G = Gate, C = Collector, T 150 C JM E = Emitter, TAB = Collector T -55 ... +150 C stg Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features International standard packages M Mounting torque (M3) 1.13/10 Nm/lb.in. d JEDEC TO-268 and Weight TO-247 AD 6 g JEDEC TO-247 AD TO-268 4 g Low switching losses, low V (sat) MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values AC motor speed control (T = 25 C, unless otherwise specified) J DC servo and robot drives min. typ. max. DC choppers Uninterruptible power supplies (UPS) BV I = 1 mA, V = 0 V 1200 V CES C GE Switched-mode and resonant-mode V I = 750 A, V = V 2.5 5 V GE(th) C CE GE power supplies I V = V T = 25 C 250 A CES CE CES J V = 0 V T = 125 C5mA GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE High power density Suitable for surface mounting V I = I , V = 15 V 3.3 V CE(sat) C C90 GE Easy to mount with 1 screw, T = 125 C 2.7 V J (isolated mounting screw hole) IXYS reserves the right to change limits, test conditions, and dimensions. 98665 (11/99) 2000 IXYS All rights reserved 1 - 2IXGH 35N120B IXGT 35N120B Symbol Test Conditions Characteristic Values TO-247 AD (IXGH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 30 40 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 4620 pF ies C V = 25 V, V = 0 V, f = 1 MHz 260 pF oes CE GE C 90 pF res Q 170 nC g Q I = I , V = 15 V, V = 0.5 V 28 nC ge C C90 GE CE CES Q 57 nC gc Dim. Millimeter Inches t 50 ns Inductive load, T = 25 C d(on) Min. Max. Min. Max. J t 27 ns A 19.81 20.32 0.780 0.800 I = I , V = 15 V ri C C90 GE B 20.80 21.46 0.819 0.845 V = 0.8 V , R = R = 5 t 180 280 ns CE CES G off d(off) C 15.75 16.26 0.610 0.640 Remarks: Switching times may D 3.55 3.65 0.140 0.144 t 160 320 ns fi increase for V (Clamp) > 0.8 V , CE CES E 4.32 5.49 0.170 0.216 E 3.8 7.3 mJ off higher T or increased R F 5.4 6.2 0.212 0.244 J G G 1.65 2.13 0.065 0.084 t 55 ns d(on) H - 4.5 - 0.177 Inductive load, T = 125 C J t 31 ns ri J 1.0 1.4 0.040 0.055 I = I , V = 15 V C C90 GE K 10.8 11.0 0.426 0.433 E 2.6 mJ on V = 0.8 V , R = R = 5 CE CES G off L 4.7 5.3 0.185 0.209 t 300 ns d(off) M 0.4 0.8 0.016 0.031 Remarks: Switching times may t 360 ns N 1.5 2.49 0.087 0.102 fi increase for V (Clamp) > 0.8 V , CE CES higher T or increased R E J G 8.0 mJ off 3 TO-268AA (D PAK) R 0.42 K/W thJC R (TO-247) 0.25 K/W thCK (TO-268) 0.3 K/W Min. Recommended Footprint Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025