Preliminary Technical Information TM GenX3 600V IGBT V = 600V IXGH48N60C3C1 CES w/ SiC Anti-Parallel I = 48A C110 Diode V 2.5V CE(sat) t = 38ns fi(typ) High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V G CGR J GE C V Continuous 20 V E ( TAB ) GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Limited by Leads) 75 A C25 C E = Emitter TAB = Collector I T = 110C 48 A C110 C I T = 110C 20 A F110 C I T = 25C, 1ms 250 A CM C Features I T = 25C 30 A A C z E T = 25C 300 mJ Optimized for Low Switching Losses AS C z Square RBSOA SSOA V = 15V, T = 125C, R = 3 I = 100 A GE VJ G CM z Anti-Parallel Schottky Diode (RBSOA) Clamped Inductive Load < V z CES Fast Switching z P T = 25C 300 W Avalanche Rated C C z International Standard Package T -55 ... +150 C J T 150 C JM T -55 ... +150 C Advantages stg T 1.6mm (0.062 in.) from Case for 10s 300 C z L High Power Density T Plastic Body for 10 Seconds 260 C z SOLD Low Gate Drive Requirement F Mounting Torque 1.13/10 Nm/lb.in C Weight 6 g Applications z High Frequency Power Inverters z UPS z Motor Drives Symbol Test Conditions Characteristic Values z SMPS (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J PFC Circuits z V I = 250A, V = V 3.0 5.5 V Battery Chargers GE(th) C CE GE z Welding Machines I V = V , V = 0V 50 A CES CE CES GE z Lamp Ballasts T = 125C 1.75 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 30A, V = 15V, Note 1 2.3 2.5 V CE(sat) C GE T = 125C 1.8 V J 2009 IXYS CORPORATION, All Rights Reserved DS100139A(06/09)IXGH48N60C3C1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 20 30 S fs C CE C 2120 pF ies C V = 25V, V = 0V, f = 1MHz 420 pF oes CE GE P C 50 pF res Q 77 nC g Q I = 30A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 32 nC gc t 19 ns e d(on) Inductive Load, T = 25C t 25 ns Dim. Millimeter Inches J ri Min. Max. Min. Max. I = 30A, V = 15V E 0.33 mJ C GE on A 4.7 5.3 .185 .209 V = 400V, R = 3 t 60 100 ns A 2.2 2.54 .087 .102 CE G d(off) 1 A 2.2 2.6 .059 .098 2 Note 2 t 38 ns fi b 1.0 1.4 .040 .055 E 0.23 0.42 mJ b 1.65 2.13 .065 .084 1 off b 2.87 3.12 .113 .123 2 t 19 ns C .4 .8 .016 .031 d(on) Inductive Load, T = 125C D 20.80 21.46 .819 .845 J t 28 ns ri E 15.75 16.26 .610 .640 I = 30A, V = 15V C GE E 0.37 mJ on e 5.20 5.72 0.205 0.225 V = 400V, R = 3 L 19.81 20.32 .780 .800 t CE G 92 ns d(off) L1 4.50 .177 Note 2 t 95 ns fi P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 E 0.57 mJ off R 4.32 5.49 .170 .216 R 0.42 C/W thJC R 0.21 C/W thCS Reverse Diode (SiC) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V, Note 1 1.65 2.10 V F F GE T = 125C 1.80 V J R 0.90 C/W thJC Notes 1. Pulse test, t 300s, duty c ycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537