Product Information

IXGK50N120C3H1

IXGK50N120C3H1 electronic component of IXYS

Datasheet
IGBT Modules High Frequency Range 40khz C-IGBT w/Diode

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

300: USD 21.0375 ea
Line Total: USD 6311.25

0 - Global Stock
MOQ: 300  Multiples: 300
Pack Size: 300
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 300
Multiples : 300
300 : USD 20.196

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 23.842
2 : USD 22.54

     
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Package / Case
Series
Brand
Mounting Style
Maximum Gate Emitter Voltage
Product Type
Factory Pack Quantity :
Subcategory
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Preliminary Technical Information TM V = 1200V GenX3 1200V IXGK50N120C3H1 CES I = 50A IGBTs w/ Diode IXGX50N120C3H1 C100 V 4.2V CE(sat) t = 64ns fi(typ) High-Speed PT IGBTs for 20 - 50 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E V T = 25C to 150C 1200 V CES J Tab V T = 25C to 150C, R = 1M 1200 V CGR J GE PLUS247 (IXGX) V Continuous 20 V GES V Transient 30 V GEM I T = 25C ( Chip Capability ) 95 A C25 C I T = 100C 50 A C100 C I T = 110C 58 A F110 C G G I T = 25C, 1ms 240 A C CM C Tab E I T = 25C 40 A A C E T = 25C 750 mJ AS C G = Gate E = Emitter SSOA V = 15V, T = 125C, R = 3 I = 100 A GE J G CM C = Collector Tab = Collector (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 460 W C C T -55 ... +150 C J Features T 150 C JM z T -55 ... +150 C Optimized for Low Switching Losses stg z Square RBSOA T Maximum Lead Temperature for Soldering 300 C L z High Avalanche Capability T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD z Avalanche Rated M Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. d z Anti-Parallel Ultra Fast Diode F Mounting Force ( IXGX ) 20..120/4.5..14.6 N/lb. C z International Standard Packages Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250A, V = V 3.0 5.0 V Applications GE(th) C CE GE I V = V , V = 0V 250 A CES CE CES GE z High Frequency Power Inverters Note 1,T = 125C 14 mA J z UPS z I V = 0V, V = 20V 100 nA Motor Drives GES CE GE z SMPS V I = 40A, V = 15V, Note 2 4.2 V CE(sat) C GE z PFC Circuits T = 125C 2.6 V J z Battery Chargers z Welding Machines z Lamp Ballasts 2012 IXYS CORPORATION, All Rights Reserved DS100163A(08/12) IXGK50N120C3H1 IXGX50N120C3H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 2 24 40 S fs C CE C 4250 pF ies C V = 25V, V = 0V, f = 1MHz 455 pF oes CE GE C 120 pF res Q 196 nC g Q I = 50A, V = 15V, V = 0.5 V 24 nC ge C GE CE CES Q 84 nC gc t 31 ns d(on) t Inductive load, T = 25C 36 ns ri J E I = 40A, V = 15V 2.0 mJ on C GE t 123 ns Terminals: 1 = Gate V = 0.5 V , R = 2 d(off) CE CES G 2,4 = Collector 3 = Emitter t Note 3 64 ns fi E 0.63 1.2 mJ off t 23 ns d(on) Inductive load, T = 125C t J 37 ns ri E 3.0 mJ I = 40A, V = 15V on C GE t 170 ns V = 0.5 V , R = 2 d(off) CE CES G t 315 ns Note 3 fi E 2.1 mJ off R 0.27 C/W thJC R 0.15 C/W thCK TM PLUS247 Outline Reverse Diode (SONIC-FRD) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 50A, V = 0V, Note 1 2.1 2.4 V F F GE T = 125C 2.3 V J I 50 A RM I = 50A, V = 0V, F GE -di /dt = 2500A/s, V = 800V F R t 75 ns Terminals: 1 - Gate rr 2 - Collector 3 - Emitter R 0.30 C/W thJC Dim. Millimeter Inches Min. Max. Min. Max. Notes: A 4.83 5.21 .190 .205 1. Part must be heatsunk for high-temp I measurement. A 2.29 2.54 .090 .100 CES 1 A 1.91 2.16 .075 .085 2. Pulse test, t 300 s, duty cycle, d 2%. 2 b 1.14 1.40 .045 .055 3. Switching times & energy loses may increase for higher V (Clamp), T or R . CE J G b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 PRELIMINARY TECHNICAL INFORMATION D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 The product presented herein is under development. The Technical Specifications offered are derived e 5.45 BSC .215 BSC from data gathered during objective characterizations of preliminary engineering lots but also may yet L 19.81 20.32 .780 .800 contain some information supplied during a pre-production design evaluation. IXYS reserves the right L1 3.81 4.32 .150 .170 to change limits, test conditions, and dimensions without notice. Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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