TM GenX3 600V IGBT V = 600V IXGN72N60C3H1 CES with Diode I = 52A C110 V 2.50V CE(sat) t = 55ns High-Speed Low-Vsat PT fi(typ) IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 150C 600 V CES J G V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E c I T = 25C 78 A C25 C C I T = 110C 52 A C110 C G = Gate, C = Collector, E = Emitter I T = 25C, 1ms 360 A CM C c either emitter terminal can be used as I T = 25C50A Main or Kelvin Emitter A C E T = 25C 500 mJ AS C SSOA V = 15V, T = 125C, R = 2 I = 150 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES z P T = 25C 360 W Optimized for Low Switching Losses C C z Square RBSOA T -55 ... +150 C J z Aluminium Nitride Isolation T 150 C JM - High Power Dissipation z T -55 ... +150 C Isolation Voltage 3000V~ stg z Avalanche Rated V 50/60Hz t = 1min 2500 V~ ISOL z Anti-Parallel Ultra Fast Diode I 1mA t = 1s 3000 V~ ISOL z International Standard Package M Mounting Torque 1.5/13 Nm/lb.in. d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Advantages Weight 30 g z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values z Power Inverters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z UPS V I = 250A, V = V 3.0 5.5 V z GE(th) C CE GE Motor Drives z SMPS I V = V , V = 0V 250 A CES CE CES GE z T = 125C 3 mA PFC Circuits J z Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE z Welding Machines V I = 50A, V = 15V, Note 1 2.10 2.50 V z CE(sat) C GE Lamp Ballasts T = 125C 1.65 J 2009 IXYS CORPORATION, All Rights Reserved DS100053A(11/09)IXGN72N60C3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 33 55 S fs C CE C 4780 pF ies C V = 25V, V = 0V, f = 1MHz 330 pF oes CE GE C 117 pF res Q 174 nC g Q I = 50A, V = 15V, V = 0.5 V 33 nC ge C GE CE CES Q 72 nC gc t 27 ns d(on) Inductive load, T = 25C t 37 ns M4 screws (4x) supplied J ri E 1.03 mJ on I = 50A, V = 15V C GE t 77 130 ns d(off) V = 480V, R = 2, Note 2 t 55 110 ns CE G fi E 0.48 0.95 mJ off t 26 ns d(on) Inductive load, T = 125C t J 36 ns ri E 1.48 mJ on I = 50A, V = 15V C GE t 120 ns d(off) V = 480V, R = 2, Note 2 t 124 ns CE G fi E 0.93 mJ off R 0.35 C/W thJC R 0.05 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.0 V F F GE T = 150C 1.4 1.8 V J I I = 60A, V 8.3 = 0V, T = 100C A RM F GE J t 140-di /dt = 200A/s, V = 300V ns rr F R R 0.42 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537