Advance Technical Information TM GenX3 1200V V = 1200V IXGR55N120A3H1 CES I = 30A IGBT w/ Diode C110 V 2.35V CE(sat) (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TM ISOPLUS 247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J G V T = 25C to 150C, R = 1M 1200 V CGR J GE C Isolated Tab E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector E = Emitter I T = 25C ( Chip Capability ) 70 A C25 C I T = 110C 30 A C110 C I T = 110C 44 A F110 C I T = 25C, 1ms 330 A CM C Features SSOA V = 15V, T = 125C, R = 3 I = 110 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES z Silicon Chip on Direct-Copper Bond P T = 25C 200 W C C (DCB) Substrate z T -55 ... +150 C Isolated Mounting Surface J z 2500V~ Electrical Isolation T 150 C JM z Anti-Parallel Ultra Fast Diode T -55 ... +150 C stg z Optimized for Low Conduction Losses T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD Advantages V 50/60 Hz, 1 minute 2500 V~ ISOL z F Mounting Force 20..120/4.5..27 N/lb. High Power Density C z Low Gate Drive Requirement Weight 5 g Applications Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Power Inverters J z UPS V I = 1mA, V = V 3.0 5.0 V GE(th) C CE GE z Motor Drives I V = V , V = 0V 25 A z CES CE CES GE SMPS Note 1, T = 125C 1.5 mA z J PFC Circuits z I V = 0V, V = 20V 100 nA Battery Chargers GES CE GE z Welding Machines V I = 55A, V = 15V, Note 2 2.35 V CE(sat) C GE z Lamp Ballasts T = 125C 2.20 J z Inrush Current Protection Circuits 2009 IXYS CORPORATION, All Rights Reserved DS100219(12/09)IXGR55N120A3H1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 2 30 45 S fs C CE C 4340 pF ies C V = 25V, V = 0V, f = 1 MHz 300 pF oes CE GE C 115 pF res Q 185 nC g(on) Q I = 55A, V = 15V, V = 0.5 V 25 nC ge C GE CE CES Q 75 nC gc t 23 ns d(on) Inductive load, T = 25C J t 42 ns ri I = 55A, V = 15V E 5.1 mJ C GE on t 365 ns V = 0.8 V , R = 3 d(off) CE CES G t 282 ns Note 3 fi E 13.3 mJ off t 24 ns d(on) Inductive load, T = 125C t 46 ns J ri I = 55A, V = 15V E 9.5 mJ C GE on t 618 ns d(off) V = 0.8 V , R = 3 CE CES G t 635 ns fi Note 3 E 29.0 mJ off R 0.62 C/W thJC R 0.15 C/W thCK Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 2 1.85 2.5 V F F GE T = 150C 1.90 V J t 200 ns rr I = 60A, V = 0V, F GE -di /dt = 350A/s, V = 600V, T = 100C I 24.6 A F R J RM R 0.42 C/W thJC Notes: 1. Part must be heatsunk for high-temp Ices measurement. 2. Pulse test, t 300 s, duty cycle, d 2%. 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537