TM GenX3 A3-Class IXGK120N60A3 V = 600V CES IXGX120N60A3 I = 120A IGBTS C110 V 1.35V CE(sat) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE G (TAB) C V Continuous 20 V GES EE V Transient 30 V GEM I T = 25C 200 A C25 C TM PLUS 247 (IXGX) I T = 110C 120 A C110 C I Terminal Current Limit 75 A LRMS I T = 25C, 1ms 600 A CM C SSOA V = 15V, T = 125C, R = 1.5 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load < 600 V G (TAB) C P T = 25C 780 W C C E T -55 ... +150 C J T 150 C JM G = Gate E = Emitter T -55 ... +150 C stg C = Collector TAB = Collector T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD M Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. Features d F Mounting Force ( IXGX ) 20..120/4.5..27 N/lb. C z Optimized for Low Conduction Losses Weight TO-264 10 g z Square RBSOA PLUS247 6 g z High Current Handling Capability z International Standard Packages Advantages z Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. z J Low Gate Drive Requirement V I = 500A, V = V 3.0 5.0 V GE(th) C CE GE Applications I V = V V = 0V 50 A CES CE CES, GE T = 125C 1.25 mA z J Power Inverters z I V = 0V, V = 20V 400 nA UPS GES CE GE z Motor Drives V I = 100A, V = 15V, Note 1 1.20 1.35 V CE(sat) C GE z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits 2009 IXYS CORPORATION, All Rights Reserved DS99964A(02/09)IXGK120N60A3 IXGX120N60A3 Symbol Test Conditions Characteristic Values TO-264 (IXGK) Outline (T = 25 C, unless otherwise specified) Min. Typ. Max. J g I = 60A, V = 10 V, Note 1 65 108 S fs C CE C 14.8 nF ies C V = 25 V, V = 0 V, f = 1 MHz 800 pF oes CE GE C 140 pF res Q 450 nC g(on) Q I = I , V = 15 V, V = 0.5 V 67 nC ge C C110 GE CE CES Q 130 nC gc t 39 ns d(on) t 82 ns Inductive load, T = 25C ri J E 2.7 mJ on I = 100A, V = 15V C GE t 295 ns d(off) V = 480V, R = 1.5 CE G t 260 ns fi E 6.6 mJ off t 40 ns d(on) t 83 ns ri Inductive load, T = 125C J E 3.5 mJ on I = 100A, V = 15V C GE t 420 ns d(off) V = 480V, R = 1.5 CE G t 410 ns fi E 10.4 mJ off R 0.16 C/W thJC R 0.15 C/W thCK TM PLUS 247 (IXGX) Outline Note: 1. Pulse Test, t 300 s Duty Cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537