TM TrenchT2 V = 55V IXTA110N055T2 DSS I = 110A Power MOSFET IXTP110N055T2 D25 R 6.6m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C55 V DSS J V T = 25 C to 175 C, R = 1M 55 V DGR J GS V Transient 20 V G GSM D S I T = 25 C 110 A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 300 A DM C JM G = Gate D = Drain I T = 25 C50 A A C S = Source Tab = Drain E T = 25 C 400 mJ AS C P T = 25 C 180 W D C Features T -55 ... +175 C J T 175 C JM International Standard Packages T -55 ... +175 C stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C Low Package Inductance L Fast Intrinsic Rectifier T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD 175C Operating Temperature F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C High Current Handling Capability M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d ROHS Compliant Weight TO-263 2.5 g High Performance Trench TO-220 3.0 g Technology for extremely low R DS(on) Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250 A 55 V DSS GS D V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Automotive Engine Control Synchronous Buck Converter I V = 20V, V = 0V 200 nA GSS GS DS (for Notebook SystemPower & I V = V , V = 0V 2 A DSS DS DSS GS General Purpose Point & Load) T = 150C 200 A DC/DC Converters J High Current Switching Applications R V = 10V, I = 25A, Notes 1 & 2 5.5 6.6 m DS(on) GS D Power Train Management Distributed Power Architecture 2018 IXYS CORPORATION, All Rights Reserved DS99955B(7/18) IXTA110N055T2 IXTP110N055T2 Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 g V = 10V, I = 55A, Note 1 30 49 S L1 D1 fs DS D D 4 L2 H C 3060 pF A1 1 2 3 iss C V = 0V, V = 25V, f = 1MHz 497 pF b2 b oss GS DS L3 e e c 0.43 11.0 C 105 pF rss 0 0.34 8.7 t 18 ns d(on) Resistive Switching Times 0.66 16.6 A2 t 25 ns r V = 10V, V = 30V, I = 25A 1 - Gate 0.20 5.0 60.12 3.0 GS DS D t 40 ns 2,4 - Drain d(off) R = 5 (External) 3 - Source G 0.10 2.5 0.06 1.6 t 23 ns f Q 57 nC g(on) Q V = 10V, V = 0.5 V , I = 25A 16 nC gs GS DS DSS D Q 11 nC gd R 0.82 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 110 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 300 A SM JM E A oP A1 V I = 25A, V = 0V, Note 1 0.84 1.00 V SD F GS H1 Q t 38 ns rr D2 D I = 50A, V = 0V, F GS I 2.4 A D1 RM -di/dt = 100A/s, V = 27V R E1 Q 46 nC RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 3X b2 1 - Gate 2. On through-hole packages, R Kelvin test contact DS(on) 2,4 - Drain 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537