STP110N8F6 STMicroelectronics

STP110N8F6 N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT TAB STP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) * packages. 6 0 Y Table 1. Device summary Order code Marking Package Packing STP110N8F6 110N8F6 TO-220 Tube December 2014 DocID026831 Rev 2 1/13 This is information on a product in full production. www.st.comContents STP110N8F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 TO-220 package information 10 5 Revision history . 12 2/13 DocID026831 Rev 2