Product Information

STP110N8F6

STP110N8F6 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1036 ea
Line Total: USD 1.1

36793 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
711980 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1000
Multiples : 1000

Stock Image

STP110N8F6
STMicroelectronics

1000 : USD 1.088

4850 - WHS 2


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 164
Multiples : 1

Stock Image

STP110N8F6
STMicroelectronics

164 : USD 0.7391

36785 - WHS 3


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STP110N8F6
STMicroelectronics

1 : USD 1.1036
10 : USD 0.9144
50 : USD 0.7572
100 : USD 0.6626
500 : USD 0.6061
1000 : USD 0.578

970 - WHS 4


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 23
Multiples : 1

Stock Image

STP110N8F6
STMicroelectronics

23 : USD 1.6671
50 : USD 1.56
100 : USD 1.3169
200 : USD 1.245
500 : USD 1.2124
1000 : USD 1.1674

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Brand Category
LoadingGif

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Additional Infomation About Product

STP110N8F6 N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT TAB STP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) * packages. 6 0 Y Table 1. Device summary Order code Marking Package Packing STP110N8F6 110N8F6 TO-220 Tube December 2014 DocID026831 Rev 2 1/13 This is information on a product in full production. www.st.comContents STP110N8F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 TO-220 package information 10 5 Revision history . 12 2/13 DocID026831 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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