Preliminary Technical Information TM V = 600V 600V XPT IGBT IXXH150N60C3 CES TM I = 150A GenX3 C110 V 2.5V CE(sat) t = 75ns Extreme Light Punch through fi(typ) IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE V Continuous 20 V G GES C Tab V Transient 30 V E GEM I T = 25C (Chip Capability) 300 A C25 C I Terminal Current Limit 160 A G = Gate C = Collector LRMS E = Emitter Tab = Collector I T = 110C 150 A C110 C I T = 25C, 1ms 700 A CM C I T = 25C 75 A A C E T = 25C 750 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 300 A GE VJ G CM (RBSOA) Clamped Inductive Load V V Features CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive G International Standard Package Optimized for 20-60kHz Switching P T = 25C 1360 W C C Square RBSOA T -55 ... +175 C J Avalanche Rated T 175 C JM Short Circuit Capability T -55 ... +175 C High Current Handling Capability stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 6g Low Gate Drive Requirement Applications Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Motor Drives BV I = 250 A, V = 0V 600 V CES C GE SMPS PFC Circuits V I = 250 A, V = V 3.0 5.5 V GE(th) C CE GE Battery Chargers I V = V , V = 0V 25 A Welding Machines CES CE CES GE Lamp Ballasts T = 150C 1 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = 100A, V = 15V, Note 1 2.1 2.5 V CE(sat) C GE T = 150C 2.6 V J 2016 IXYS CORPORATION, All Rights Reserved DS100558A(9/16)IXXH150N60C3 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 27 45 S fs C CE Q S D2 R C 6460 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 403 pF 0P1 oes CE GE 4 R1R1R1R1 C 138 pF 1 2 3 res IXYS OPTION L1 C Q 200 nC g(on) E1 L Q I = 150A, V = 15V, V = 0.5 V 52 nC ge C GE CE CES Q 80 nC gc A1 b c b2 t 34 ns b4 d(on) 1 - Gate e 2,4 - Collector Inductive load, T = 25C t 70 ns J J M C A M ri 3 - Emitter I = 75A, V = 15V E 3.4 mJ C GE on V = 400V, R = 2 t 120 ns CE G d(off) t 75 ns Note 2 fi E 1.8 mJ f of t 32 ns d(on) Inductive load, T = 150C t 68 ns J ri I = 75A, V = 15V E 3.9 mJ C GE on V = 400V, R = 2 t 150 ns CE G d(off) t 80 ns Note 2 fi E 2.2 mJ off R 0.11 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537