TM XPT 600V IGBT V = 600V IXXH30N60B3 CES TM GenX3 I = 30A C110 V 1.85V CE(sat) t = 125ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J G C V T = 25C to 175C, R = 1M 600 V Tab CGR J GE E V Continuous 20 V GES V Transient 30 V G = Gate C = Collector GEM E = Emitter Tab = Collector I T = 25C 60 A C25 C I T = 110C 30 A C110 C I T = 25C, 1ms 115 A CM C I T = 25C 20 A A C Features E T = 25C 250 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 48 A Optimized for 5-30kHz Switching GE VJ G CM (RBSOA) Clamped Inductive Load V V Square RBSOA CE CES Avalanche Capability t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Short Circuit Capability (SCSOA) R = 82, Non Repetitive G International Standard Package P T = 25C 270 W C C T -55 ... +175 C J Advantages T 175 C JM T -55 ... +175 C stg High Power Density 175C Rated T Maximum Lead Temperature for Soldering 300 C L Extremely Rugged T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in d Weight 6g Applications Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Motor Drives BV I = 250 A, V = 0V 600 V CES C GE SMPS V I = 250 A, V = V 3.5 6.0 V PFC Circuits GE(th) C CE GE Battery Chargers I V = V , V = 0V 25 A CES CE CES GE Welding Machines T = 150C 250 A J Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 24A, V = 15V, Note 1 1.66 1.85 V CE(sat) C GE T = 150C 1.97 V J 2013 IXYS CORPORATION, All Rights Reserved DS100491B(7/13)IXXH30N60B3 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 1 8 14 S fs C CE C 1185 pF ies C V = 25V, V = 0V, f = 1MHz 137 pF oes CE GE C 25 pF res Q 39 nC g(on) Q I = 24A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Q 17 nC gc t 23 ns d(on) 1 - Gate 2,4 - Collector t 36 ns Inductive load, T = 25C ri J 3 - Emitter E 0.55 mJ I = 24A, V = 15V on C GE t 97 150 ns V = 400V, R = 10 d(off) CE G t 125 ns fi Note 2 E 0.50 0.80 mJ f of t 23 ns d(on) Inductive load, T = 150C t 34 ns J ri I = 24A, V = 15V E 1.10 mJ C GE on V = 400V, R = 10 t 112 ns CE G d(off) t 180 ns Note 2 fi E 0.70 mJ off R 0.55 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537