IXXH30N60C3D1 IXYS

IXXH30N60C3D1 electronic component of IXYS
IXXH30N60C3D1 IXYS
IXXH30N60C3D1 IGBT Transistors
IXXH30N60C3D1  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of IXXH30N60C3D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXXH30N60C3D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXXH30N60C3D1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT 600V IGBT 30A
Datasheet: IXXH30N60C3D1 Datasheet (PDF)
Price (USD)
1: USD 8.676 ea
Line Total: USD 8.68 
Availability - 185
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 8.676
10$ 5.456
120$ 5.445
510$ 4.972

Availability 185
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.676
10$ 5.456
120$ 5.445
510$ 4.972

   
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We are delighted to provide the IXXH30N60C3D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXXH30N60C3D1 and other electronic components in the IGBT Transistors category and beyond.

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TM XPT 600V IGBT V = 600V IXXH30N60C3D1 CES TM GenX3 w/ Diode I = 30A C110 V 2.4V CE(sat) t = 32ns fi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 60 A C25 C G = Gate C = Collector I T = 110C 30 A C110 C E = Emitter Tab = Collector I T = 110C 30 A F110 C I T = 25C, 1ms 110 A CM C I T = 25C 20 A A C E T = 25C 250 mJ AS C Features SSOA V = 15V, T = 150C, R = 10 I = 48 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for 20-60kHz Switching t V = 15V, V = 360V, T = 150C 10 s Square RBSOA sc GE CE J Anti-Parallel Ultra Fast Diode (SCSOA) R = 82, Non Repetitive G Avalanche Capability P T = 25C 270 W C C Short Circuit Capability T -55 ... +175 C International Standard Package J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C High Power Density SOLD 175C Rated M Mounting Torque 1.13/10 Nm/lb.in d Extremely Rugged Weight 6g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J UPS BV I = 250A, V = 0V 600 V CES C GE Motor Drives V I = 250 A, V = V 3.5 6.0 V SMPS GE(th) C CE GE PFC Circuits I V = V , V = 0V 100 A CES CE CES GE Battery Chargers T = 150C 1 mA J Welding Machines I V = 0V, V = 20V 100 nA Lamp Ballasts GES CE GE V I = 24A, V = 15V, Note 1 1.85 2.40 V CE(sat) C GE T = 150C 2.30 V J 2015 IXYS CORPORATION, All Rights Reserved DS100333C(9/15)IXXH30N60C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 1 8 14 S fs C CE C 1185 pF ies C V = 25V, V = 0V, f = 1MHz 133 pF oes CE GE C 25 pF res Q 37 nC g(on) Q I = 24A, V = 15V, V = 0.5 V 10 nC ge C GE CE CES Q 15 nC gc t 23 ns d(on) 1 - Gate 2,4 - Collector t 33 ns Inductive load, T = 25C ri J 3 - Emitter E 0.50 mJ I = 24A, V = 15V on C GE t 77 125 ns V = 400V, R = 10 d(off) CE G t 32 ns fi Note 2 E 0.27 0.45 mJ f of t 22 ns d(on) Inductive load, T = 150C t 35 ns J ri I = 24A, V = 15V E 1.13 mJ C GE on V = 400V, R = 10 t 88 ns CE G d(off) t 78 ns Note 2 fi E 0.40 mJ off R 0.55 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.7 V F F GE T = 150C 1.6 V J I TI = 30A, V = 0V, -di /dt = 100A/s, = 100C 4 A RM F GE F J t V = 100V T = 100C 100 ns rr R J I = 1A, V = 0V, -di /dt = 100A/s, V = 30V 25 ns F GE F R R 0.9 C/W thJC Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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