IXXH50N60C3D1 IXYS

IXXH50N60C3D1 electronic component of IXYS
IXXH50N60C3D1 IXYS
IXXH50N60C3D1 IGBT Transistors
IXXH50N60C3D1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXXH50N60C3D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXXH50N60C3D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXXH50N60C3D1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
Datasheet: IXXH50N60C3D1 Datasheet (PDF)
Price (USD)
1: USD 11.616 ea
Line Total: USD 11.62 
Availability : 935
  
Ship by Mon. 04 Aug to Wed. 06 Aug
QtyUnit Price
1$ 11.616
10$ 7.821
120$ 6.798
510$ 6.556

Availability 935
Ship by Mon. 04 Aug to Wed. 06 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 11.616
10$ 7.821
120$ 6.798
510$ 6.556

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXXH50N60C3D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXXH50N60C3D1 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Technical Information TM V = 600V XPT 600V IGBT IXXH50N60C3D1 CES TM I = 50A GenX3 w/ Diode C110 V 2.30V CE(sat) t = 42ns fi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J G V T = 25C to 175C, R = 1M 600 V CGR J GE C Tab E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Chip Capability) 100 A E = Emitter Tab = Collector C25 C I T = 110C 50 A C110 C I T = 110C 30 A F110 C I T = 25C, 1ms 200 A CM C I T = 25C 25 A A C Features E T = 25C 200 mJ AS C z SSOA V = 15V, T = 150C, R = 5 I = 100 A Optimized for 20-60kHz Switching GE VJ G CM z (RBSOA) Clamped Inductive Load V Square RBSOA CES z Anti-Parallel Ultra Fast Diode t V = 15V, V = 360V, T = 150C 10 s sc GE CE J z Avalanche Capability (SCSOA) R = 22, Non Repetitive G z Short Circuit Capability z P T = 25C 600 W International Standard Package C C T -55 ... +175 C J T 175 C JM Advantages T -55 ... +175 C stg z T Maximum Lead Temperature for Soldering 300 C High Power Density L z T 1.6 mm (0.062in.) from Case for 10s 260 C 175C Rated SOLD z Extremely Rugged M Mounting Torque 1.13/10 Nm/lb.in. d z Low Gate Drive Requirement Weight 6g Applications Symbol Test Conditions Characteristic Values z Power Inverters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z UPS BV I = 250A, V = 0V 600 V z CES C GE Motor Drives z V I = 250A, V = V 3.0 5.5 V SMPS GE(th) C CE GE z PFC Circuits I V = V , V = 0V 25 A CES CE CES GE z Battery Chargers T = 150C 3 mA J z Welding Machines z I V = 0V, V = 20V 100 nA Lamp Ballasts GES CE GE V I = 36A, V = 15V, Note 1 1.95 2.30 V CE(sat) C GE T = 150C 2.45 V J 2013 IXYS CORPORATION, All Rights Reserved DS100274A(01/13)IXXH50N60C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 11 18 S C CE fs C 2320 pF ies C V = 25V, V = 0V, f = 1MHz 138 pF P oes CE GE 1 2 3 C 42 pF res Q 64 nC g Q I = 36A, V = 15V, V = 0.5 V 18 nC ge C GE CE CES Q 25 nC gc t 24 ns e d(on) Inductive load, T = 25C t 40 ns Terminals: 1 - Gate 2 - Collector J ri 3 - Emitted I = 36A, V = 15V E 0.72 mJ C GE on Dim. Millimeter Inches V = 360V, R = 5 t CE G 62 100 ns d(off) Min. Max. Min. Max. t Note 2 42 ns A 4.7 5.3 .185 .209 fi A 2.2 2.54 .087 .102 1 E 0.33 0.55 mJ f of A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 25 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 44 ns J ri b 2.87 3.12 .113 .123 2 I = 36A, V = 15V E 1.46 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 360V, R = 5 t CE G 80 ns d(off) E 15.75 16.26 .610 .640 t Note 2 90 ns e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 0.48 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.25 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.7 V F F GE T = 150C 1.6 V J I TI = 30A, V = 0V, -di /dt = 100A/s, = 100C 4 A RM F GE F J t T = 100C 100 ns V = 100V rr J R 25 ns I = 1A, V = 0V, -di /dt = 100A/s, V = 30V F GE F R R 0.9 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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