TM TM V = 650V XPT 650V GenX4 IXXR110N65B4H1 CES I = 70A w/ Sonic Diode C110 V 2.10V CE(sat) (Electrically Isolated Tab) t = 43ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G C V Continuous 20 V Isolated Tab E GES V Transient 30 V GEM I T = 25C (Chip Capability) 165 A C25 C G = Gate C = Collector I T = 110C 70 A C110 C E = Emitter I T = 110C 48 A F110 C I T = 25C, 1ms 490 A CM C SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Silicon Chip on Direct-Copper Bond P T = 25C 455 W C C (DCB) Substrate Isolated Mounting Surface T -55 ... +175 C J 2500V~ Electrical Isolation T 175 C JM Optimized for 10-30kHz Switching T -55 ... +175 C stg Square RBSOA T Maximum Lead Temperature for Soldering 300 C L Short Circuit Capability T 1.6 mm (0.062in.) from Case for 10s 260 C Anti-Parallel Sonic Diode SOLD High Current Handling Capability V 50/60 Hz, 1 Minute 2500 V ISOL F Mounting Force 20..120/4.5..27 N/lb C Advantages Weight 5 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 650 V Power Inverters CES C GE UPS V I = 250A, V = V 4.0 6.5 V GE(th) C CE GE Motor Drives I V = V , V = 0V 25 A SMPS CES CE CES GE PFC Circuits T = 150C 3 A J Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE Welding Machines Lamp Ballasts V I = 110A, V = 15V, Note 1 1.72 2.10 V CE(sat) C GE High Frequency Power Inverters T = 150C 2.05 V J 2016 IXYS CORPORATION, All Rights Reserved DS100529C(8/16)IXXR110N65B4H1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXXR) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 5500 pF ies C V = 25V, V = 0V, f = 1MHz 470 pF oes CE GE C 80 pF res Q 183 nC g(on) Q I = 110A, V = 15V, V = 0.5 V 32 nC ge C GE CE CES Q 83 nC gc t 26 ns d(on) Inductive load, T = 25C t 40 ns J ri I = 55A, V = 15V E 2.20 mJ C GE on V = 400V, R = 2 1 - Gate t 146 ns CE G d(off) 2 - Collector t 43 ns Note 2 fi 3 - Emitter E 1.05 1.70 mJ off t 25 ns d(on) t Inductive load, T = 150C 40 ns ri J E I = 55A, V = 15V 3.00 mJ on C GE t 140 ns V = 400V, R = 2 d(off) CE G t 110 ns fi Note 2 E 2.16 mJ off R 0.33 C/W thJC R 0.15 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 1.7 2.3 V F F GE T = 150C 1.8 V J I 95 A I = 100A, V = 0V, T = 150C RM F GE J t -di /dt = 1500A/sV = 300V 100 ns rr F R R 0.70 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537