TM 1200V XPT IGBT V = 1200V IXYH40N120C3 CES TM GenX3 I = 40A C110 V 3.5V CE(sat) t = 50ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 90 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 175 A CM C I T = 25C 20 A A C E T = 25C 400 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 80 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 577 W C C Optimized for Low Switching Losses Square RBSOA T -55 ... +175 C J Positive Thermal Coefficient of T 175 C JM Vce(sat) T -55 ... +175 C stg Avalanche Rated High Current Handling Capability T Maximum Lead Temperature for Soldering 300 C L International Standard Package T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Advantages Weight 6g High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Motor Drives J SMPS BV I = 250 A, V = 0V 1200 V CES C GE PFC Circuits V I = 250 A, V = V 3.0 5.0 V Battery Chargers GE(th) C CE GE Welding Machines I V = V , V = 0V 10 A CES CE CES GE Lamp Ballasts T = 150C 750 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 2.9 3.5 V CE(sat) C GE T = 150C 3.7 V J 2016 IXYS CORPORATION, All Rights Reserved DS100416B(5/16)IXYH40N120C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 40A, V = 10V, Note 1 11 18 S fs C CE Q S D2 R C 1870 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 107 pF 0P1 oes CE GE 4 R1R1R1R1 C 38 pF 1 2 3 res IXYS OPTION L1 C Q 80 nC g(on) E1 L Q I = 40A, V = 15V, V = 0.5 V 14 nC ge C GE CE CES Q 37 nC gc A1 b c b2 t 18 ns b4 d(on) 1 - Gate e 2,4 - Collector t 64 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 3.8 mJ I = 40A, V = 15V on C GE t 133 ns V = 0.5 V , R = 10 d(off) CE CES G t 50 ns fi Note 2 E 1.1 mJ f of t 22 ns d(on) Inductive load, T = 150C t 73 ns J ri I = 40A, V = 15V E 6.6 mJ C GE on V = 0.5 V , R = 10 t 160 ns CE CES G d(off) t 143 ns Note 2 fi E 2.1 mJ off R 0.26 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537