TM 1200V XPT V = 1200V IXYH55N120A4 CES TM GenX4 IGBT I = 55A C110 V 1.8V CE(sat) t = 270ns fi(typ) Ultra Low-Vsat PT IGBT for up to 5kHz Switching TO-247 (IXYH) G C Symbol Test Conditions Maximum Ratings E C (Tab) V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE G = Gate C = Collector V Continuous 20 V GES E = Emitter Tab = Collector V Transient 30 V GEM I T = 25C 175 A C25 C I T = 110C 55 A C110 C I T = 25C, 1ms 350 A CM C Features SSOA V = 15V, T = 125C, R = 5 I = 110 A GE VJ G CM Optimized for Low Conduction Losses (RBSOA) Clamped Inductive Load V 0.8 V CE CES Positive Thermal Coefficient of P T = 25C 650 W C C Vce(sat) International Standard Package T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L High Power Density 1.6 mm (0.062 in.) from Case for 10s Low Gate Drive Requirement M Mounting Torque 1.13 / 10 Nm/lb.in d Weight 6 g Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 1200 V Battery Chargers CES C GE Welding Machines V I = 250 A, V = V 4.0 6.5 V GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 5 A CES CE CES GE Inrush Current Protector Circuits T = 150 C 2.5 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 55A, V = 15V, Note 1 1.5 1.8 V CE(sat) C GE T = 150 C 1.8 V J 2020 Littelfuse, Inc. DS100983C(4/20)IXYH55N120A4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 22 36 S fs C CE C 2150 pF ies C V = 25V, V = 0V, f = 1MHz 125 pF oes CE GE C 80 pF res Q 110 nC g(on) Q I = 55A, V = 15V, V = 0.5 V 17 nC ge C GE CE CES Q 56 nC gc t 23 ns d(on) t 35 ns Inductive load, T = 25C ri J E 2.3 mJ I = 40A, V = 15V on C GE t 300 ns V = 0.5 V , R = 5 d(off) CE CES G t 270 ns fi Note 2 E 5.3 mJ off t 21 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 40A, V = 15V E 3.8 mJ C GE on V = 0.5 V , R = 5 t 380 ns CE CES G d(off) t 530 ns Note 2 fi E 8.8 mJ off R 0.23 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537