Product Information

IXYN100N65B3D1

IXYN100N65B3D1 electronic component of IXYS

Datasheet
Ic:100A; SOT227B; screw; screw; 600W; GenX3™, XPT™
Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 29.0521 ea
Line Total: USD 29.05

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 33.376
2 : USD 31.556

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Semiconductor Structure
Case
Mounting
Electrical Mounting
Technology
Type Of Module
Pulsed Collector Current
Gate-Emitter Voltage
Collector-Emitter Voltage
Collector Current
LoadingGif

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Additional Infomation About Product

The IXYN100N65B3D1 is a 100A Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It is housed in a SOT227B package, making it suitable for use in high power switching applications. The terminals of the module are screw type for reliable electrical connection. This module is also equipped with GenX3™ and XPT™ technologies that offer up to 600W of peak power, making it a reliable and efficient switching component for high current and high power applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IXYS may also be referenced as

CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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