IXYX140N120A4 IXYS

IXYX140N120A4 electronic component of IXYS
IXYX140N120A4 IXYS
IXYX140N120A4 IGBT Transistors
IXYX140N120A4  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXYX140N120A4 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXYX140N120A4 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXYX140N120A4
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 PLUS247
Datasheet: IXYX140N120A4 Datasheet (PDF)
Price (USD)
1: USD 48.829 ea
Line Total: USD 48.83 
Availability : 252
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 48.829
10$ 41.294
120$ 37.059

Availability 252
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 48.829
10$ 41.294
120$ 37.059

   
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We are delighted to provide the IXYX140N120A4 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXYX140N120A4 and other electronic components in the IGBT Transistors category and beyond.

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TM 1200V XPT IGBT V = 1200V IXYX140N120A4 CES TM GenX4 I = 140A C110 V 1.70V CE(sat) t = 320ns fi(typ) Ultra Low-Vsat IGBT for up to 5kHz Switching PLUS247 (IXYX) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J G G C V T = 25C to 175C, R = 1M 1200 V CGR J GE E C (Tab) V Continuous 20 V GES G = Gate C = Collector V Transient 30 V GEM E = Emitter Tab = Collector I T = 25C (Chip Capability) 480 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 140 A C110 C I T = 25C, 1ms 1200 A CM C SSOA V = 15V, T = 125C, R = 2 I = 280 A GE VJ G CM Features (RBSOA) Clamped Inductive Load 0.8 V V CES P T = 25C 1500 W Optimized for Low Conduction Losses C C Positive Thermal Coefficient of T -55 ... +175 C J Vce(sat) T 175 C JM International Standard Package T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages 1.6 mm (0.062 in.) from Case for 10s F Mounting Force 20..120 /4.5..27 N/lb High Power Density C Low Gate Drive Requirement Weight 6 g Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 1200 V Battery Chargers CES C GE Welding Machines V I = 4mA, V = V 4.5 6.5 V GE(th) C CE GE Lamp Ballasts Inrush Current Protection Circuits I V = V , V = 0V 25 A CES CE CES GE T = 125 C 5 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = I , V = 15V, Note 1 1.34 1.70 V CE(sat) C C110 GE T = 150 C 1.50 V J 2020 Littelfuse, Inc. DS101009A(6/20)IXYX140N120A4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 60 100 S fs C CE C 8300 pF ies C V = 25V, V = 0V, f = 1MHz 470 pF oes CE GE C 300 pF res Q 420 nC g(on) Q I = I , V = 15V, V = 0.5 V 68 nC ge C C110 GE CE CES Q 210 nC gc t 52 ns d(on) t 47 ns Inductive load, T = 25C ri J E I = 70A, V = 15V 4.9 mJ on C GE t 590 ns V = 0.5 V , R = 1.5 d(off) CE CES G t 320 ns fi Note 2 E 12.0 mJ off t 44 ns d(on) Inductive load, T = 150C t 42 ns J ri I = 70A, V = 15V E 7.4 mJ C GE on V = 0.5 V , R = 1.5 t 710 ns CE CES G d(off) t Note 2 530 ns fi E 20.0 mJ off R 0.10 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Littelfuse/IXYS
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