TM XPT 900V IGBTs V = 900V IXYK140N90C3 CES TM GenX3 I = 140A IXYX140N90C3 C110 V 2.7V CE(sat) t = 105ns fi(typ) High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C V T = 25C to 175C 900 V E CES J Tab V T = 25C to 175C, R = 1M 900 V CGR J GE V Continuous 20 V PLUS247 (IXYX) GES V Transient 30 V GEM I T = 25C (Chip Capability) 310 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 140 A C110 C G G I T = 25C, 1ms 840 A C CM C Tab E I T = 25C 70 A A C E T = 25C 1 J AS C G = Gate E = Emitter SSOA V = 15V, T = 150C, R = 1 I = 280 A C = Collector Tab = Collector GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 1630 W C C Features T -55 ... +175 C J T 175 C z Optimized for Low Switching Losses JM z T -55 ... +175 C Square RBSOA stg z International Standard Packages T Maximum Lead Temperature for Soldering 300 C z L Positive Thermal Coefficient of T 1.6 mm (0.062in.) from Case for 10s 260 C Vce(sat) SOLD z Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g z High Power Density z Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 950 V CES C GE Applications V I = 250A, V = V 3.5 5.5 V GE(th) C CE GE z High Frequency Power Inverters I V = V , V = 0V 25 A z CES CE CES GE UPS T = 150C 1.25 mA z Motor Drives J z SMPS I V = 0V, V = 20V 100 nA GES CE GE z PFC Circuits z V I = I , V = 15V, Note 1 2.15 2.70 V Battery Chargers CE(sat) C C110 GE z T = 150C 2.85 V Welding Machines J z Lamp Ballasts 2013 IXYS CORPORATION, All Rights Reserved DS100450B(02/13)IXYK140N90C3 IXYX140N90C3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 9830 pF ies C V = 25V, V = 0V, f = 1MHz 570 pF oes CE GE C 185 pF res Q 330 nC g(on) Q I = I , V = 15V, V = 0.5 V 82 nC ge C C110 GE CE CES Q 128 nC gc t 40 ns d(on) t 86 ns Inductive load, T = 25C ri J E I = 100A, V = 15V 4.3 mJ on C GE Terminals: 1 = Gate t 145 ns V = 0.5 V , R = 1 2,4 = Collector d(off) CE CES G 3 = Emitter t 105 ns fi Note 2 E 4.0 6.5 mJ off t 37 ns d(on) Inductive load, T = 150C t 85 ns J ri I = 100A, V = 15V E 6.5 mJ C GE on V = 0.5 V , R = 1 t 175 ns CE CES G d(off) t Note 2 125 ns fi E 5.0 mJ off R 0.092 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537