MCD72-14io8B IXYS

MCD72-14io8B electronic component of IXYS
MCD72-14io8B IXYS
MCD72-14io8B Discrete Semiconductor Modules
MCD72-14io8B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MCD72-14io8B Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MCD72-14io8B Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. MCD72-14io8B
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 72 Amps 1400V
Datasheet: MCD72-14io8B Datasheet (PDF)
Price (USD)
36: USD 32.1939 ea
Line Total: USD 1158.98 
Availability : 0
  
QtyUnit Price
36$ 32.1939
108$ 29.9725
252$ 29.8329
504$ 28.5651
1008$ 28.5651

Availability 0
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 36
Multiples : 36
QtyUnit Price
36$ 32.1939
108$ 29.9725
252$ 29.8329
504$ 28.5651
1008$ 28.5651


Availability 0
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 38.3331
2$ 36.2434

   
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We are delighted to provide the MCD72-14io8B from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCD72-14io8B and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MCC 72 MCD 72 I = 2x180 A Thyristor Modules TRMS I = 2x115 A TAVM Thyristor/Diode Modules V = 800-1800 V RRM TO-240 AA 6 V V Type RSM RRM 3 7 4 2 V V DSM DRM 5 1 V V Version 1 B 8 B Version 1 B 8 B 900 800 MCC 72-08 io1 B / io8 B MCD 72-08 io1 B / io8 B 1300 1200 MCC 72-12 io1 B / io8 B MCD 72-12 io1 B / io8 B 1500 1400 MCC 72-14 io1 B / io8 B MCD 72-14 io1 B / io8 B 1700 1600 MCC 72-16 io1 B / io8 B MCD 72-16 io1 B / io8 B 1900 1800 MCC 72-18 io1 B / io8 B MCD 72-18 io1 B / io8 B 3671 542 Symbol Conditions Maximum Ratings I , I T = T 180 A TRMS FRMS VJ VJM MCC I , I T = 63C 180 sine 115 A TAVM FAVM C Version 1 B T = 85C 180 sine 85 A C 31542 I , I T = 45C t = 10 ms (50 Hz), sine 1700 A TSM FSM VJ V = 0 t = 8.3 ms (60 Hz), sine 1800 A R MCD T = T t = 10 ms (50 Hz), sine 1540 A VJ VJM Version 1 B V = 0 t = 8.3 ms (60 Hz), sine 1640 A R 2 2 i dt T = 45C t = 10 ms (50 Hz), sine 14 450 A s 361 52 VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 13 500 A s R MCC 2 T = T t = 10 ms (50 Hz), sine 11 850 A s VJ VJM Version 8 B 2 V = 0 t = 8.3 ms (60 Hz), sine 11 300 A s R 31 52 (di/dt) T = T repetitive, I = 250 A 150 A/s cr VJ VJM T f = 50 Hz t =200 s P MCD 2 Version 8 B V = / V D 3 DRM I = 0.45 A non repetitive, I = I 500 A/s G T TAVM di /dt = 0.45 A/s G Features 2 (dv/dt) T = T V = / V 1000 V/s cr VJ VJM DR 3 DRM International standard package, R = method 1 (linear voltage rise) GK JEDEC TO-240 AA Direct copper bonded Al O -ceramic 2 3 P T = T t = 30 s 10 W GM VJ VJM P base plate I = I t = 300 s 5 W T TAVM P Planar passivated chips P 0.5 W GAV Isolation voltage 3600 V~ UL registered, E 72873 V 10 V RGM Gate-cathode twin pins for version 1B T -40...+125 C VJ T 125 C VJM Applications T -40...+125 C stg DC motor control V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Softstart AC motor controller I 1 mA t = 1 s 3600 V~ ISOL Light, heat and temperature control M Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in. d Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in. Advantages Weight Typical including screws 90 g Space and weight savings Simple mounting with two screws Improved temperature and power cycling Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions 2004 IXYS All rights reserved 1 - 4 419MCC 72 MCD 72 Symbol Conditions Characteristic Values I , I T = T V = V V = V 5mA RRM DRM VJ VJM R RRM D DRM V /V I /I = 300 A T = 25C 1.74 V T F T F VJ V For power-loss calculations only (T = 125C) 0.85 V T0 VJ r 3.2 m T V V = 6 V T = 25C 2.5 V GT D VJ T = -40C 2.6 V VJ I V = 6 V T = 25C 150 mA GT D VJ T = -40C 200 mA VJ 2 V T = T V = / V 0.2 V GD VJ VJM D 3 DRM I 10 mA GD I T = 25C t = 10 s V = 6 V 450 mA L VJ P D I = 0.45 A di /dt = 0.45 A/s G G I T = 25C V = 6 V R = 200 mA H VJ D GK t T = 25C V = V 2s gd VJ D DRM I = 0.45 A di /dt = 0.45 A/s G G t T = T I = 150 A, t = 200 s -di/dt = 10 A/s typ. 185 s Fig. 1 Gate trigger characteristics q VJ VJM T P 2 V = 100 V dv/dt = 20 V/s V = / V R D 3 DRM Q T = T I /I = 50 A, -di/dt = 6 A/s 170 C S VJ VJM T F I 45 A RM R per thyristor/diode DC current 0.3 K/W thJC per module other values 0.15 K/W R per thyristor/diode DC current see Fig. 8/9 0.5 K/W thJK per module 0.25 K/W d Creepage distance on surface 12.7 mm S d Strike distance through air 9.6 mm A 2 a Maximum allowable acceleration 50 m/s Optional accessories for module-type MCC 72 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394 ) MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B IXYS reserves the right to change limits, test conditions and dimensions 2004 IXYS All rights reserved 2 - 4 419

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
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Ixys Corporation
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IXYS SEMICONDUCTOR
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